型号 功能描述 生产厂家 企业 LOGO 操作
PTF210301

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

Infineon

英飞凌

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

Infineon

英飞凌

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

Infineon

英飞凌

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz

文件:198.94 Kbytes Page:9 Pages

Infineon

英飞凌

PTF210301产品属性

  • 类型

    描述

  • 型号

    PTF210301

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

更新时间:2025-12-29 10:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
24+
S
3000
全新原装现货 优势库存
INFINEON
NEW
原厂封装
7936
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
Infineon(英飞凌)
23+
标准封装
7000
公司只做原装,可来电咨询
LNFINEON
24+
TO-63
90000
一级代理商进口原装现货、价格合理
N/A
24+
NA
9860
一级代理/放心购买
INFINEON
22+
SMD
8000
终端可免费供样,支持BOM配单
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INFINEON
24+
18
Infineon(英飞凌)
2021/2022+
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
N/A
23+
NA
50000
全新原装正品现货,支持订货

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