型号 功能描述 生产厂家 企业 LOGO 操作
PTF210301E

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

Infineon

英飞凌

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

Infineon

英飞凌

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz

文件:198.94 Kbytes Page:9 Pages

Infineon

英飞凌

PTF210301E产品属性

  • 类型

    描述

  • 型号

    PTF210301E

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

更新时间:2025-12-28 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
23
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON
NEW
原厂封装
7936
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
N/A
2023+
NA
8635
全新原装正品,优势价格
INFINEON/英飞凌
2019+
SMD
6992
原厂渠道 可含税出货
INFINEON/英飞凌
23+
TO-59
8510
原装正品代理渠道价格优势
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INF
24+
63
Infineon(英飞凌)
23+
标准封装
7000
公司只做原装,可来电咨询
INFINEON
23+
7000
Infineon(英飞凌)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞

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