位置:LET21030C > LET21030C详情

LET21030C中文资料

厂家型号

LET21030C

文件大小

62.62Kbytes

页面数量

4

功能描述

RF POWER TRANSISTORS Ldmos Enhanced Technology

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

LET21030C数据手册规格书PDF详情

DESCRIPTION

The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.

Designed for GSM / EDGE / IS-97 / WCDMA applications

• EXCELLENT THERMAL STABILITY

• POUT = 30 W with 11 dB gain @ 2170 MHz

• BeO FREE PACKAGE

• INTERNAL INPUT MATCHING

• ESD PROTECTION

更新时间:2025-10-5 9:31:00
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