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位置：首页 > IC中文资料第3707页 > PTF0

PTF0价格

参考价格：￥23.1868

型号：PTF01-152A-103B2 品牌：BOURNS 备注：这里有PTF0多少钱，2025年最近7天走势，今日出价，今日竞价，PTF0批发/采购报价，PTF0行情走势销售排行榜，PTF0报价。
型号 功能描述 生产厂家&企业 LOGO 操作
PTF08

General Purpose Relay

AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF080101

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF080101M

High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

Description ThePTF080101Misanunmatched10-wattGOLDMOS®FETintendedforclassABbasestationapplicationsinthe450MHzto960MHzband.ThisLDMOSdeviceoffersexcellentgain,efficiencyandlinearityperformanceinasmallfootprint. Features •TypicalEDGEperformance -Averageout

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF080101S

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF080101S

Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF080451

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -A

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF080451E

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -A

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF080601

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF080601A

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF080601E

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF080601F

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF080901

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF080901E

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF080901F

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF081301E

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

Description ThePTF081301EandPTF081301Fare130-watt,internally-matchedGOLDMOSFETsintendedforEDGEandCDMAapplicationsinthe869to960MHzbands.Thermally-enhancedpackagingprovidesthecoolestoperationavailable.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliab

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF081301F

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

Description ThePTF081301EandPTF081301Fare130-watt,internally-matchedGOLDMOSFETsintendedforEDGEandCDMAapplicationsinthe869to960MHzbands.Thermally-enhancedpackagingprovidesthecoolestoperationavailable.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliab

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF08A

General Purpose Relay

AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF08A-E

General Purpose Relay

AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF01070

Level sensor

文件：481.84 Kbytes Page：2 Pages

CELDUCcelduc Relais

凡纪继电器凡纪继电器（上海）有限公司

CELDUC
PTF01-082T-103A2

包装：托盘 描述：SLIDE POT 10KOHM 0.25W TOP 100MM 电位计，可变电阻器 滑动电位计

ETC

知名厂家

PTF01-082T-103B2

包装：托盘 描述：SLIDE POT 10K OHM 0.5W TOP 100MM 电位计，可变电阻器 滑动电位计

ETC

知名厂家

PTF01-152A-102B1

Panel Control

文件：204.72 Kbytes Page：3 Pages

BournsBourns Electronic Solutions

伯恩斯

Bourns
PTF041501E

Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

文件：245.11 Kbytes Page：11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF041501F

Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

文件：245.11 Kbytes Page：11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
PTF08A

Power-switching Compact General-purpose Relays

文件：9.30035 Mbytes Page：22 Pages

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF08A

General-purpose Relay

文件：732.3 Kbytes Page：14 Pages

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF08A

General-purpose Relays and Power Relays Sockets

文件：878.49 Kbytes Page：27 Pages

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF08A-E

General Purpose Relay ??LY

文件：354.93 Kbytes Page：15 Pages

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF08A-E

Power-switching Compact General-purpose Relays

文件：9.30035 Mbytes Page：22 Pages

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF08AFORLY

General-purpose Relays and Power Relays Sockets

文件：878.49 Kbytes Page：27 Pages

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON

PTF0产品属性

  • 类型

    描述

  • 型号

    PTF0

  • 制造商

    CELDUC

  • 功能描述

    LIQUID LEVEL SENSOR VERT

  • 制造商

    celduc relais

  • 功能描述

    LIQUID LEVEL SENSOR, VERT

  • 制造商

    CELDUC

  • 功能描述

    LIQUID LEVEL SENSOR, VERT; Output

  • Current

    500mA; Sensor Body

  • Material

    Nylon 6.6(Polyamide 6.6);

  • SVHC

    No SVHC(19-Dec-2012); Body

  • Material

    PA(Polyamide); Contact

  • Configuration

    1NO; Contact Current AC

  • Max

    0.5A; Contact Current

PTF0供应商更多...

更新时间：2025-6-25 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
PTF080901E
Infineon(英飞凌)
24+
标准封装
8538
原厂渠道供应,大量现货,原型号开票。
询价
深圳市得捷芯城科技有限公司
PTF081301F
INF
24+
NA/
3300
原厂直销,现货供应,账期支持!
询价
深圳市凌旭科技有限公司
PTF08A-E
OMRON
2016+
DIP
26250
全新原装,假一罚十,公司主营继电器!
询价
深圳市纳艾斯科技有限公司
PTF082001E
INFINEO
24+
高频
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
中天科工半导体（深圳）有限公司
PTF080101S
INFINEON/英飞凌
20+
原装
67500
原装优势主营型号-可开原型号增税票
询价
深圳市科达星科技有限公司
PTF080901E
INFINEON
24+
TO-63
9630
我们只做原装正品现货!量大价优!
询价
深圳市威雅利发展有限公司
PTF082001E
INFINEON
05+
高频
350
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市博浩通科技有限公司
PTF080901E
INFINEON
23+
SOT-502A
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
深圳市弘扬芯城科技有限公司
PTF08A
OMRON(欧姆龙)
2024+
-
500000
诚信服务,绝对原装原盘
询价
深圳市恒佳微电子有限公司
PTF08A-E
OMRON
21+
5400
原装正品现货
询价

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PTF0规格书下载地址

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DdatasheetPDF页码索引

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