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PTF0价格
参考价格：￥23.1868
型号：PTF01-152A-103B2 品牌：BOURNS 备注：这里有PTF0多少钱，2025年最近7天走势，今日出价，今日竞价，PTF0批发/采购报价，PTF0行情走势销售排行榜，PTF0报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
General Purpose Relay A Miniature Power Relay ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or 100/110 VDC | OMRON 欧姆龙 |   | ||
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output power | Infineon 英飞凌 | | ||
High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS® FETintended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Features • Typical EDGE performance - Average out | Infineon 英飞凌 | | ||
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output power | Infineon 英飞凌 | | ||
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output power | Infineon 英飞凌 | | ||
LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - A | Infineon 英飞凌 | | ||
LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - A | Infineon 英飞凌 | | ||
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output | Infineon 英飞凌 | | ||
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output | Infineon 英飞凌 | | ||
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output | Infineon 英飞凌 | | ||
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output | Infineon 英飞凌 | | ||
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output | Infineon 英飞凌 | | ||
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output | Infineon 英飞凌 | | ||
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output | Infineon 英飞凌 | | ||
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhancedpackaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliab | Infineon 英飞凌 | | ||
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhancedpackaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliab | Infineon 英飞凌 | | ||
General Purpose Relay A Miniature Power Relay ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or 100/110 VDC | OMRON 欧姆龙 | | ||
General Purpose Relay A Miniature Power Relay ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or 100/110 VDC | OMRON 欧姆龙 | | ||
Level sensor 文件：481.84 Kbytes Page：2 Pages | CELDUC 凡纪继电器 | | ||
包装：托盘 描述：SLIDE POT 10KOHM 0.25W TOP 100MM 电位计，可变电阻器 滑动电位计 | ETC 知名厂家 | ETC | | |
包装：托盘 描述：SLIDE POT 10K OHM 0.5W TOP 100MM 电位计，可变电阻器 滑动电位计 | ETC 知名厂家 | ETC | | |
Panel Control 文件：204.72 Kbytes Page：3 Pages | Bourns 伯恩斯 | | ||
可调电阻/电位器 | Bourns 伯恩斯 | | ||
可调电阻/电位器 | Bourns 伯恩斯 | | ||
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz 文件：245.11 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz 文件：245.11 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz | Infineon 英飞凌 | | ||
Power-switching Compact General-purpose Relays 文件：9.30035 Mbytes Page：22 Pages | OMRON 欧姆龙 | | ||
General-purpose Relay 文件：732.3 Kbytes Page：14 Pages | OMRON 欧姆龙 | | ||
General-purpose Relays and Power Relays Sockets 文件：878.49 Kbytes Page：27 Pages | OMRON 欧姆龙 | | ||
General Purpose Relay ??LY 文件：354.93 Kbytes Page：15 Pages | OMRON 欧姆龙 | | ||
Power-switching Compact General-purpose Relays 文件：9.30035 Mbytes Page：22 Pages | OMRON 欧姆龙 | | ||
General-purpose Relays and Power Relays Sockets 文件：878.49 Kbytes Page：27 Pages | OMRON 欧姆龙 | |
PTF0产品属性
- 类型
描述
- 型号
PTF0
- 制造商
CELDUC
- 功能描述
LIQUID LEVEL SENSOR VERT
- 制造商
celduc relais
- 功能描述
LIQUID LEVEL SENSOR, VERT
- 制造商
CELDUC
- 功能描述
LIQUID LEVEL SENSOR, VERT; Output
- Current
500mA; Sensor Body
- Material
Nylon 6.6(Polyamide 6.6);
- SVHC
No SVHC(19-Dec-2012); Body
- Material
PA(Polyamide); Contact
- Configuration
1NO; Contact Current AC
- Max
0.5A; Contact Current
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
8538 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INF |
24+ |
NA/ |
3300 |
原厂直销,现货供应,账期支持! |
|||
OMRON |
2016+ |
DIP |
26250 |
全新原装,假一罚十,公司主营继电器! |
|||
INFINEO |
24+ |
高频 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
OMRON |
2025+ |
N/A |
2000 |
原装原厂发货7-15工作日 |
|||
INFINEON/英飞凌 |
20+ |
原装 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
OMRON(欧姆龙) |
2024+ |
- |
500000 |
诚信服务,绝对原装原盘 |
|||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
OMRON 欧姆龙 |
ROHS+ Original 元件 继电器 |
原封 原厂 |
10050 |
现货原装--电子元件更多数量咨询/样品批量支持 OMRO |
|||
INFENION |
2450+ |
MSOP10 |
9850 |
只做原装正品现货或订货假一赔十! |
PTF0规格书下载地址
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DdatasheetPDF页码索引
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