您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第3707页 > PTF0

PTF0价格

参考价格：￥23.1868

型号：PTF01-152A-103B2 品牌：BOURNS 备注：这里有PTF0多少钱，2024年最近7天走势，今日出价，今日竞价，PTF0批发/采购报价，PTF0行情走势销售排行榜，PTF0报价。
型号 功能描述 生产厂家&企业 LOGO 操作
PTF08

General Purpose Relay

AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF080101

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080101M

High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

Description ThePTF080101Misanunmatched10-wattGOLDMOS®FETintendedforclassABbasestationapplicationsinthe450MHzto960MHzband.ThisLDMOSdeviceoffersexcellentgain,efficiencyandlinearityperformanceinasmallfootprint. Features •TypicalEDGEperformance -Averageout

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080101S

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080101S

Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080451

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -A

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080451E

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -A

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080601

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080601A

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080601E

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080601F

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080901

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080901E

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF080901F

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF081301E

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

Description ThePTF081301EandPTF081301Fare130-watt,internally-matchedGOLDMOSFETsintendedforEDGEandCDMAapplicationsinthe869to960MHzbands.Thermally-enhancedpackagingprovidesthecoolestoperationavailable.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliab

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF081301F

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

Description ThePTF081301EandPTF081301Fare130-watt,internally-matchedGOLDMOSFETsintendedforEDGEandCDMAapplicationsinthe869to960MHzbands.Thermally-enhancedpackagingprovidesthecoolestoperationavailable.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliab

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF08A

General Purpose Relay

AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF08A-E

General Purpose Relay

AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF01070

Level sensor

文件：481.84 Kbytes Page：2 Pages

CELDUCcelduc Relais (Shanghai）Co., Ltd

凡纪继电器凡纪继电器（上海）有限公司

CELDUC
PTF01-082T-103A2

包装：托盘 描述：SLIDE POT 10KOHM 0.25W TOP 100MM 电位计，可变电阻器 滑动电位计

BournsBourns Inc.

伯恩斯（邦士）

Bourns
PTF01-082T-103B2

包装：托盘 描述：SLIDE POT 10K OHM 0.5W TOP 100MM 电位计，可变电阻器 滑动电位计

BournsBourns Inc.

伯恩斯（邦士）

Bourns
PTF01-152A-102B1

Panel Control

文件：204.72 Kbytes Page：3 Pages

BournsBourns Inc.

伯恩斯（邦士）

Bourns
PTF041501E

Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

文件：245.11 Kbytes Page：11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF041501F

Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

文件：245.11 Kbytes Page：11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
PTF08A

Power-switching Compact General-purpose Relays

文件：9.30035 Mbytes Page：22 Pages

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF08A-E

General Purpose Relay ??LY

文件：354.93 Kbytes Page：15 Pages

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON
PTF08A-E

Power-switching Compact General-purpose Relays

文件：9.30035 Mbytes Page：22 Pages

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON

PTF0产品属性

  • 类型

    描述

  • 型号

    PTF0

  • 制造商

    CELDUC

  • 功能描述

    LIQUID LEVEL SENSOR VERT

  • 制造商

    celduc relais

  • 功能描述

    LIQUID LEVEL SENSOR, VERT

  • 制造商

    CELDUC

  • 功能描述

    LIQUID LEVEL SENSOR, VERT; Output

  • Current

    500mA; Sensor Body

  • Material

    Nylon 6.6(Polyamide 6.6);

  • SVHC

    No SVHC(19-Dec-2012); Body

  • Material

    PA(Polyamide); Contact

  • Configuration

    1NO; Contact Current AC

  • Max

    0.5A; Contact Current

PTF0供应商更多...

更新时间：2024-6-16 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
PTF080901E
Infineon(英飞凌)
23+
标准封装
8538
原厂渠道供应,大量现货,原型号开票。
询价
深圳市得捷芯城科技有限公司
PTF081301F
INF
23+
NA/
3300
原厂直销,现货供应,账期支持!
询价
深圳市凌旭科技有限公司
PTF08A-E
OMRON
2016+
DIP
26250
全新原装,假一罚十,公司主营继电器!
询价
深圳市科芯源微电子有限公司
PTF080101
INFINEON/英飞凌
23+
SMD
54258
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市纳艾斯科技有限公司
PTF082001E
INFINEO
2020+
高频
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市弘扬芯城科技有限公司
PTF08A
OMRON(欧姆龙)
23+
6000
诚信服务，绝对原装原盘
询价
深圳市科恒伟业电子有限公司
PTF081301F
FREESC
1844+
6528
只做原装正品假一赔十为客户做到零风险!!
询价
中科航电（深圳）电子集团有限公司
PTF08A-E
OMRON
DIP
699839
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
深圳市明嘉莱科技有限公司
PTF08A-E
OMRON
22+
SMD
518000
明嘉莱只做原装正品现货
询价
深圳市汇莱威科技有限公司
PTF08A-E
OMRON/欧姆龙
589220
16余年资质 绝对原盒原盘 更多数量
询价

PTF0芯片相关品牌

  • ALLIED
  • DIODES
  • EATON
  • etc2
  • HARTING
  • Littelfuse
  • MERITEK
  • MOLEX1
  • NSC
  • RALTRON
  • SUMIDA
  • TEC

PTF0规格书下载地址

PTF0参数引脚图相关

PTF0数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2024 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示