PTF08价格

参考价格:¥25.4942

型号:PTF08A 品牌:Omron Industrial 备注:这里有PTF08多少钱,2024年最近7天走势,今日出价,今日竞价,PTF08批发/采购报价,PTF08行情走势销售排行榜,PTF08报价。
型号 功能描述 生产厂家&企业 LOGO 操作
PTF08

General Purpose Relay

AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

Description ThePTF080101Misanunmatched10-wattGOLDMOS®FETintendedforclassABbasestationapplicationsinthe450MHzto960MHzband.ThisLDMOSdeviceoffersexcellentgain,efficiencyandlinearityperformanceinasmallfootprint. Features •TypicalEDGEperformance -Averageout

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutputpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -A

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -A

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

Description ThePTF081301EandPTF081301Fare130-watt,internally-matchedGOLDMOSFETsintendedforEDGEandCDMAapplicationsinthe869to960MHzbands.Thermally-enhancedpackagingprovidesthecoolestoperationavailable.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliab

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

Description ThePTF081301EandPTF081301Fare130-watt,internally-matchedGOLDMOSFETsintendedforEDGEandCDMAapplicationsinthe869to960MHzbands.Thermally-enhancedpackagingprovidesthecoolestoperationavailable.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliab

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

General Purpose Relay

AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON

General Purpose Relay

AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON

封装/外壳:H-32259-2 包装:带 描述:FET RF 65V 960MHZ H-32259-2 分立半导体产品 晶体管 - FET,MOSFET - 射频

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

包装:散装 描述:RELAY SOCKET 8 POSITION DIN RAIL 继电器 继电器插座、插槽

Omron Automation and SafetyOmron Automation and Safety

欧姆龙自动化

Omron Automation and Safety

Power-switching Compact General-purpose Relays

文件:9.30035 Mbytes Page:22 Pages

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON

General Purpose Relay ??LY

文件:354.93 Kbytes Page:15 Pages

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON

Power-switching Compact General-purpose Relays

文件:9.30035 Mbytes Page:22 Pages

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON

PTF08产品属性

  • 类型

    描述

  • 型号

    PTF08

  • 制造商

    OMRON

  • 制造商全称

    Omron Electronics LLC

  • 功能描述

    General Purpose Relay

更新时间:2024-6-22 12:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
OMRON(欧姆龙)
21+
ThroughHole
4500
航宇科工半导体-央企合格优秀供方
INFINEON
2023+
SOT476C
3685
全新原厂原装产品、公司现货销售
OMRON/欧姆龙
2308+
670
优势代理渠道,原装现货,可全系列订货
Infineon Technologies
23+
原装
5000
原装正品,提供BOM配单服务
OMRON 欧姆龙
23+
原封 原厂
10050
现货原装--电子元件更多数量咨询/样品批量支持 OMRO
23+
N/A
78000
一级代理放心采购
POWER
2022+
N
57550
INFINEON
23+
SOT-502A
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
OMRON/欧姆龙
24+
DIP
9000
只做原装正品 有挂有货 假一赔十
INFENION
21+
MSOP10
6000
原装正品

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