型号 功能描述 生产厂家 企业 LOGO 操作
PTF080901F

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

Infineon

英飞凌

PTF080901F

LDMOSRF Power Field Effect Transistor 90 W, 869–960 MHz

Infineon

英飞凌

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

Infineon

英飞凌

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

Infineon

英飞凌

PTF080901F产品属性

  • 类型

    描述

  • 型号

    PTF080901F

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INF
24+
NA/
3300
原厂直销,现货供应,账期支持!
INFINEO
24+
高频
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON
24+
SMD
5500
长期供应原装现货实单可谈
INFINEON
NA
5500
一级代理 原装正品假一罚十价格优势长期供货
INFINEON
25+
高频
30000
代理全新原装现货,价格优势
Infineon
原厂封装
9800
原装进口公司现货假一赔百
INFINEON
24+
高频
8500
原厂原包原装公司现货,假一赔十,低价出售
INFINON
23+
TO-59
8510
原装正品代理渠道价格优势
24+
3000
公司存货
INFINEON
23+
8000
只做原装现货

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