Description

The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Features

• Broadband internal matching

• Typical EDGE performance

- Average output power = 4.0 W

- Gain = 19 dB

- Efficiency = 31

• Typical CW performance

- Output power at P–1dB = 13 W

- Gain = 18 dB

- Efficiency = 55

• Integrated ESD protection: Human Body Model, Class 1 (minimum)

• Excellent thermal stability

• Low HCI drift

• Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power