位置:PTF080101M > PTF080101M详情

PTF080101M中文资料

厂家型号

PTF080101M

文件大小

258.49Kbytes

页面数量

8

功能描述

High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

INFINEON

PTF080101M数据手册规格书PDF详情

Description

The PTF080101M is an unmatched 10-watt GOLDMOS® FETintended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint.

Features

• Typical EDGE performance

- Average output power = 5.0 W

- Gain = 19 dB

- Efficiency = 37

- EVM = 2.0

• Typical CW performance

- Output Power at P–1dB = 12.5 W

- Gain = 18 dB

- Efficiency = 50

• Integrated ESD protection: Human Body Model Class 1 (minimum)

• Excellent thermal stability

• Low HCI drift

• Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power

• Pb-free and RoHS compliant

PTF080101M产品属性

  • 类型

    描述

  • 型号

    PTF080101M

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz

更新时间:2025-12-16 11:16:00
供应商 型号 品牌 批号 封装 库存 备注 价格
INFINEON
24+
SMD
5500
长期供应原装现货实单可谈
INFINEON
25+
RFP-10
3000
就找我吧!--邀您体验愉快问购元件!
INFINEON
23+
7000
INFINEON
NA
5500
一级代理 原装正品假一罚十价格优势长期供货
INFINEON
23+
8000
只做原装现货
Infineon Technologies
25+
10-TFSOP 10-MSOP(0.118 3.00
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
Infineon Technologies
22+
RFP10
9000
原厂渠道,现货配单
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
Infineon Technologies
21+
PG-RFP-10
21000
100%进口原装!长期供应!绝对优势价格(诚信经营)!