Description

The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhancedpackaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.

Features

• Thermally-enhanced packages

• Broadband internal matching

• Typical EDGE performance

- Average output power = 65 W

- Gain = 18 dB

- Efficiency = 40

• Typical CW performance

- Output power at P–1dB = 150 W

- Gain = 17 dB

- Efficiency = 55

• Integrated ESD protection: Human Body Model, Class 1 (minimum)

• Excellent thermal stability

• Low HCI drift

• Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power