PD20价格

参考价格:¥75.5727

型号:PD20010-E 品牌:STMicroelectronics 备注:这里有PD20多少钱,2025年最近7天走势,今日出价,今日竞价,PD20批发/采购报价,PD20行情走势销售排行榜,PD20报价。
型号 功能描述 生产厂家 企业 LOGO 操作
PD20

SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES FOR P.C. BOARD AND POWER TERMINAL MOUNTING

SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES FOR P.C. BOARD AND POWER TERMINAL MOUNTING

edi

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

STMICROELECTRONICS

意法半导体

DIODE MODULE 200A/1200 to 1600V

FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

NIEC

RF power transistor, LdmoST family

Description The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellen

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

STMICROELECTRONICS

意法半导体

DIODE MODULE 200A/1200 to 1600V

FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

NIEC

200竊?Avg 800 竊턮lts

DIODE 200A Avg 800 Volts

NIEC

Diode

DIODE 200A Avg 800 Volts

KSS

京瓷

PD20-1-1210 Hardware Manual

Features • Stepper Motor NEMA8 / 20mm • 0.0175Nm holding torque • with controller/driver • Linear and sixPoint™ ramps • +6. . . 30V DC supply voltage • Up to 0.6A RMS motor current • RS485 interface • integrated simple hall-sensor based encoder • 1x multi-purpose input Applications •

TRINAMIC

Handheld with Lithium-Ion Battery

Features ■Mobile reading and writing of RFID tags ■Approved for use in China ■Handheld with UHF antenna ■Connection to the host device via 3.5 mm jack plug ■Incl. TURCK RFID app (iOS, Android) for reading and writing of data carriers ■Custom app on request ■WLAN and mobile interface via c

TURCKTurck, Inc.

图尔克德国图尔克集团公司

Handheld with Lithium-Ion Battery

Features ■Mobile reading and writing of RFID data carriers ■Approved for use in the European Union, Turkey and India ■Handheld with UHF antenna ■Connection to the host device via 3.5 mm jack plug ■Incl. TURCK RFID app (iOS, Android) for reading and writing of data carriers ■Custom app on

TURCKTurck, Inc.

图尔克德国图尔克集团公司

Handheld with Lithium-Ion Battery

Features ■Mobile reading and writing of RFID data carriers ■Approved for use in the USA, Canada and Mexico ■Handheld with UHF antenna ■Connection to the host device via 3.5 mm jack plug ■Incl. TURCK RFID app (iOS, Android) for reading and writing of data carriers ■Custom app on request

TURCKTurck, Inc.

图尔克德国图尔克集团公司

Plate Capacitors with Contoured Rim - Class 1 Ceramic

文件:122.13 Kbytes Page:3 Pages

VishayVishay Siliconix

威世威世科技公司

Three-Way In-Phase Power Divider 25 - 1000 MHz

文件:22.6 Kbytes Page:1 Pages

MACOM

封装/外壳:PowerSO-10RF 裸露底部焊盘(2 条直引线) 包装:托盘 描述:TRANS RF N-CH FET POWERSO-10RF 分立半导体产品 晶体管 - FET,MOSFET - 射频

STMICROELECTRONICS

意法半导体

封装/外壳:PowerSO-10RF 裸露底部焊盘(2 条直引线) 包装:卷带(TR) 描述:TRANS N-CH 40V POWERSO-10RF STR 分立半导体产品 晶体管 - FET,MOSFET - 射频

STMICROELECTRONICS

意法半导体

200A Avg 1200 1600 Volts

文件:153.57 Kbytes Page:2 Pages

NIEC

15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package

STMICROELECTRONICS

意法半导体

200A Avg 1200 1600 Volts

文件:153.57 Kbytes Page:2 Pages

NIEC

DIODE

文件:776.2 Kbytes Page:2 Pages

NI

恩艾

DIODE MODULE 200A/800V

文件:204.75 Kbytes Page:3 Pages

NIEC

200A Avg 800 Volts

文件:156.44 Kbytes Page:2 Pages

NIEC

二极管/晶闸管模块-普通整流二极管

KSS

京瓷

THYRISTOR/DIODE (ISOLATED TYPE)

文件:58.41 Kbytes Page:1 Pages

SANREX

三社

THYRISTOR/DIODE (ISOLATED TYPE)

文件:58.41 Kbytes Page:1 Pages

SANREX

三社

THYRISTOR/DIODE (ISOLATED TYPE)

文件:58.41 Kbytes Page:1 Pages

SANREX

三社

THYRISTOR/DIODE (ISOLATED TYPE)

文件:58.41 Kbytes Page:1 Pages

SANREX

三社

可控硅

SANREX

三社

THYRISTOR MODULE

文件:116.06 Kbytes Page:2 Pages

SANREX

三社

THYRISTOR MODULE

文件:116.06 Kbytes Page:2 Pages

SANREX

三社

THYRISTOR MODULE

文件:110.21 Kbytes Page:2 Pages

SANREX

三社

THYRISTOR MODULE

文件:110.21 Kbytes Page:2 Pages

SANREX

三社

200竊?Avg 1600 竊턮lts

文件:157.54 Kbytes Page:2 Pages

NIEC

Diode

文件:229.52 Kbytes Page:2 Pages

KSS

京瓷

DIODE

文件:157.54 Kbytes Page:2 Pages

NI

恩艾

DIODE

文件:158.32 Kbytes Page:2 Pages

NI

恩艾

DIODE

文件:158.32 Kbytes Page:2 Pages

NI

恩艾

200A Avg 1600 Volts

文件:126.63 Kbytes Page:2 Pages

NIEC

Diode

文件:847.67 Kbytes Page:5 Pages

KSS

京瓷

DIODE

文件:126.63 Kbytes Page:2 Pages

NI

恩艾

200A Avg 800 Volts

文件:83.83 Kbytes Page:1 Pages

NIEC

Diode

文件:611.99 Kbytes Page:5 Pages

KSS

京瓷

DIODE

文件:83.83 Kbytes Page:1 Pages

NI

恩艾

DIODE MODULE - 200A/1600V

文件:176.82 Kbytes Page:6 Pages

NIEC

200A Avg 1600 Volts

文件:26.39 Kbytes Page:1 Pages

NIEC

Diode

文件:803.44 Kbytes Page:5 Pages

KSS

京瓷

200A Avg 1600 Volts

文件:26.39 Kbytes Page:1 Pages

NIEC

DIODE

文件:26.39 Kbytes Page:1 Pages

NI

恩艾

200A Avg 800 Volts

文件:26.37 Kbytes Page:1 Pages

NIEC

DIODE MODULE - 200A/800V

文件:172.42 Kbytes Page:6 Pages

NIEC

Diode

文件:574.93 Kbytes Page:5 Pages

KSS

京瓷

200A Avg 800 Volts

文件:26.37 Kbytes Page:1 Pages

NIEC

DIODE

文件:26.37 Kbytes Page:1 Pages

NI

恩艾

Fast Recovery Diode

文件:996.32 Kbytes Page:4 Pages

KSS

京瓷

PD20产品属性

  • 类型

    描述

  • 型号

    PD20

  • 制造商

    EDI

  • 制造商全称

    Electronic devices inc.

  • 功能描述

    SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES FOR P.C. BOARD AND POWER TERMINAL MOUNTING

更新时间:2025-12-6 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NIEC
24+
module
6000
全新原装正品现货 假一赔佰
SANREX/三社
25+
原厂原封可拆样
54285
百分百原装现货 实单必成 欢迎询价
ST(意法)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
TOSHIBA/东芝
23+
SOP28
6000
专业配单保证原装正品假一罚十
EVERLIGHT
1602+
DIP-2
27153
一级代理,专注军工、汽车、医疗、工业、新能源、电力
EVERLIGHT/亿光
24+
84000
只做原装进口现货
Marki microwave
24+
N/A
4500
Marki优势渠道
ST/意法半导体
21+
10RF-Formed-4
8860
原装现货,实单价优
RFHIC
25+
NA
880000
明嘉莱只做原装正品现货

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