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位置：首页 > IC中文资料第6132页 > PD20

PD20价格

参考价格：￥75.5727

型号：PD20010-E 品牌：STMicroelectronics 备注：这里有PD20多少钱，2025年最近7天走势，今日出价，今日竞价，PD20批发/采购报价，PD20行情走势销售排行榜，PD20报价。
型号 功能描述 生产厂家 企业 LOGO 操作
PD20

SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES FOR P.C. BOARD AND POWER TERMINAL MOUNTING

SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES FOR P.C. BOARD AND POWER TERMINAL MOUNTING

edi

PD20010-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20010S-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20010STR-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20010TR-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20012

DIODE MODULE 200A/1200 to 1600V

FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

NIEC

PD20015C

RF power transistor, LdmoST family

Description The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellen

STMICROELECTRONICS

意法半导体

PD20015-E

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20015S-E

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20015STR-E

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20015TR-E

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20016

DIODE MODULE 200A/1200 to 1600V

FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

NIEC

PD200KN8

200竊?Avg 800 竊턮lts

DIODE 200A Avg 800 Volts

NIEC

PD200KN8

Diode

DIODE 200A Avg 800 Volts

KSS

京瓷

PD20-UHF-CHN-R

Handheld with Lithium-Ion Battery

Features ■Mobile reading and writing of RFID tags ■Approved for use in China ■Handheld with UHF antenna ■Connection to the host device via 3.5 mm jack plug ■Incl. TURCK RFID app (iOS, Android) for reading and writing of data carriers ■Custom app on request ■WLAN and mobile interface via c

TURCKTurck, Inc.

图尔克德国图尔克集团公司

PD20-UHF-EU-R

Handheld with Lithium-Ion Battery

Features ■Mobile reading and writing of RFID data carriers ■Approved for use in the European Union, Turkey and India ■Handheld with UHF antenna ■Connection to the host device via 3.5 mm jack plug ■Incl. TURCK RFID app (iOS, Android) for reading and writing of data carriers ■Custom app on

TURCKTurck, Inc.

图尔克德国图尔克集团公司

PD20-UHF-NA-R

Handheld with Lithium-Ion Battery

Features ■Mobile reading and writing of RFID data carriers ■Approved for use in the USA, Canada and Mexico ■Handheld with UHF antenna ■Connection to the host device via 3.5 mm jack plug ■Incl. TURCK RFID app (iOS, Android) for reading and writing of data carriers ■Custom app on request

TURCKTurck, Inc.

图尔克德国图尔克集团公司

PD200

Plate Capacitors with Contoured Rim - Class 1 Ceramic

文件：122.13 Kbytes Page：3 Pages

VishayVishay Siliconix

威世威世科技公司

PD20-0010-S

Three-Way In-Phase Power Divider 25 - 1000 MHz

文件：22.6 Kbytes Page：1 Pages

MACOM

PD20010S-E

封装/外壳：PowerSO-10RF 裸露底部焊盘（2 条直引线） 包装：托盘 描述：TRANS RF N-CH FET POWERSO-10RF 分立半导体产品 晶体管 - FET，MOSFET - 射频

STMICROELECTRONICS

意法半导体

PD20010STR-E

封装/外壳：PowerSO-10RF 裸露底部焊盘（2 条直引线） 包装：卷带（TR） 描述：TRANS N-CH 40V POWERSO-10RF STR 分立半导体产品 晶体管 - FET，MOSFET - 射频

STMICROELECTRONICS

意法半导体

PD20010TR-E

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF power tran LdmoST N-chann

STMICROELECTRONICS

意法半导体

PD20012

200A Avg 1200 1600 Volts

文件：153.57 Kbytes Page：2 Pages

NIEC

PD20015-E

15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package

STMICROELECTRONICS

意法半导体

PD20016

二极管/晶闸管模块-普通整流二极管

KSS

京瓷

PD20016

200A Avg 1200 1600 Volts

文件：153.57 Kbytes Page：2 Pages

NIEC

PD20016_15

DIODE

文件：776.2 Kbytes Page：2 Pages

NI

恩艾

PD2008

DIODE MODULE 200A/800V

文件：204.75 Kbytes Page：3 Pages

NIEC

PD2008

200A Avg 800 Volts

文件：156.44 Kbytes Page：2 Pages

NIEC

PD200FG120

THYRISTOR/DIODE (ISOLATED TYPE)

文件：58.41 Kbytes Page：1 Pages

SANREX

三社

PD200FG160

THYRISTOR/DIODE (ISOLATED TYPE)

文件：58.41 Kbytes Page：1 Pages

SANREX

三社

PD200FG40

THYRISTOR/DIODE (ISOLATED TYPE)

文件：58.41 Kbytes Page：1 Pages

SANREX

三社

PD200FG80

THYRISTOR/DIODE (ISOLATED TYPE)

文件：58.41 Kbytes Page：1 Pages

SANREX

三社

PD200GB40

THYRISTOR MODULE

文件：116.06 Kbytes Page：2 Pages

SANREX

三社

PD200GB80

THYRISTOR MODULE

文件：116.06 Kbytes Page：2 Pages

SANREX

三社

PD200HB120

THYRISTOR MODULE

文件：110.21 Kbytes Page：2 Pages

SANREX

三社

PD200HB160

THYRISTOR MODULE

文件：110.21 Kbytes Page：2 Pages

SANREX

三社

PD200KN16

200竊?Avg 1600 竊턮lts

文件：157.54 Kbytes Page：2 Pages

NIEC

PD200KN16

Diode

文件：229.52 Kbytes Page：2 Pages

KSS

京瓷

PD200KN16_15

DIODE

文件：157.54 Kbytes Page：2 Pages

NI

恩艾

PD200KN8

DIODE

文件：158.32 Kbytes Page：2 Pages

NI

恩艾

PD200KN8_15

DIODE

文件：158.32 Kbytes Page：2 Pages

NI

恩艾

PD200S16

200A Avg 1600 Volts

文件：126.63 Kbytes Page：2 Pages

NIEC

PD200S16

Diode

文件：847.67 Kbytes Page：5 Pages

KSS

京瓷

PD200S16_15

DIODE

文件：126.63 Kbytes Page：2 Pages

NI

恩艾

PD200S8

200A Avg 800 Volts

文件：83.83 Kbytes Page：1 Pages

NIEC

PD200S8

Diode

文件：611.99 Kbytes Page：5 Pages

KSS

京瓷

PD200S8_15

DIODE

文件：83.83 Kbytes Page：1 Pages

NI

恩艾

PD20116

DIODE MODULE - 200A/1600V

文件：176.82 Kbytes Page：6 Pages

NIEC

PD20116

200A Avg 1600 Volts

文件：26.39 Kbytes Page：1 Pages

NIEC

PD20116

Diode

文件：803.44 Kbytes Page：5 Pages

KSS

京瓷

PD20116_1

200A Avg 1600 Volts

文件：26.39 Kbytes Page：1 Pages

NIEC

PD20116_15

DIODE

文件：26.39 Kbytes Page：1 Pages

NI

恩艾

PD2018

200A Avg 800 Volts

文件：26.37 Kbytes Page：1 Pages

NIEC

PD2018

DIODE MODULE - 200A/800V

文件：172.42 Kbytes Page：6 Pages

NIEC

PD2018

Diode

文件：574.93 Kbytes Page：5 Pages

KSS

京瓷

PD2018_1

200A Avg 800 Volts

文件：26.37 Kbytes Page：1 Pages

NIEC

PD2018_15

DIODE

文件：26.37 Kbytes Page：1 Pages

NI

恩艾

PD201FKN6

Fast Recovery Diode

文件：996.32 Kbytes Page：4 Pages

KSS

京瓷

PD202B

3mm Silicon PIN Photodiode

文件：124.81 Kbytes Page：7 Pages

Everlight

台湾亿光

PD20产品属性

  • 类型

    描述

  • 型号

    PD20

  • 制造商

    EDI

  • 制造商全称

    Electronic devices inc.

  • 功能描述

    SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES FOR P.C. BOARD AND POWER TERMINAL MOUNTING

PD20供应商更多...

更新时间：2025-10-16 10:55:00
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正纳10年以上分销经验原装进口正品做服务做口碑有支持
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原厂
NA
5500
一级代理 原装正品假一罚十价格优势长期供货
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深圳市盈慧通电子有限公司
PD20015-E
ST/意法半导体
2511
10RF-Formed-4
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
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PD204-6B
EVERLIGHT
23+
DIP
3000
原装正品假一罚百!可开增票!
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富凯科技(深圳）有限公司
PD20010-E其他IC
ST/意法
24+
PowerSO
1000
只做原装，欢迎询价，量大价优
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PD204-6C
EVERLIG
23+
DIP-2
8650
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