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位置：首页 > IC中文资料第6132页 > PD200

PD200价格

参考价格：￥75.5727

型号：PD20010-E 品牌：STMicroelectronics 备注：这里有PD200多少钱，2025年最近7天走势，今日出价，今日竞价，PD200批发/采购报价，PD200行情走势销售排行榜，PD200报价。
型号 功能描述 生产厂家 企业 LOGO 操作
PD200

Plate Capacitors with Contoured Rim - Class 1 Ceramic

文件：122.13 Kbytes Page：3 Pages

VishayVishay Siliconix

威世威世科技公司

PD20010-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20010S-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20010STR-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20010TR-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20012

DIODE MODULE 200A/1200 to 1600V

FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

NIEC

PD20015C

RF power transistor, LdmoST family

Description The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellen

STMICROELECTRONICS

意法半导体

PD20015-E

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20015S-E

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20015STR-E

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20015TR-E

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

STMICROELECTRONICS

意法半导体

PD20016

DIODE MODULE 200A/1200 to 1600V

FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

NIEC

PD200KN8

Diode

DIODE 200A Avg 800 Volts

KSS

京瓷

PD200KN8

200竊?Avg 800 竊턮lts

DIODE 200A Avg 800 Volts

NIEC

PD20010S-E

封装/外壳：PowerSO-10RF 裸露底部焊盘（2 条直引线） 包装：托盘 描述：TRANS RF N-CH FET POWERSO-10RF 分立半导体产品 晶体管 - FET，MOSFET - 射频

STMICROELECTRONICS

意法半导体

PD20010STR-E

封装/外壳：PowerSO-10RF 裸露底部焊盘（2 条直引线） 包装：卷带（TR） 描述：TRANS N-CH 40V POWERSO-10RF STR 分立半导体产品 晶体管 - FET，MOSFET - 射频

STMICROELECTRONICS

意法半导体

PD20010TR-E

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF power tran LdmoST N-chann

STMICROELECTRONICS

意法半导体

PD20012

200A Avg 1200 1600 Volts

文件：153.57 Kbytes Page：2 Pages

NIEC

PD20015-E

15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package

STMICROELECTRONICS

意法半导体

PD20016

二极管/晶闸管模块-普通整流二极管

KSS

京瓷

PD20016

200A Avg 1200 1600 Volts

文件：153.57 Kbytes Page：2 Pages

NIEC

PD20016_15

DIODE

文件：776.2 Kbytes Page：2 Pages

NI

恩艾

PD2008

DIODE MODULE 200A/800V

文件：204.75 Kbytes Page：3 Pages

NIEC

PD2008

200A Avg 800 Volts

文件：156.44 Kbytes Page：2 Pages

NIEC

PD200FG120

THYRISTOR/DIODE (ISOLATED TYPE)

文件：58.41 Kbytes Page：1 Pages

SANREX

三社

PD200FG160

THYRISTOR/DIODE (ISOLATED TYPE)

文件：58.41 Kbytes Page：1 Pages

SANREX

三社

PD200FG40

THYRISTOR/DIODE (ISOLATED TYPE)

文件：58.41 Kbytes Page：1 Pages

SANREX

三社

PD200FG80

THYRISTOR/DIODE (ISOLATED TYPE)

文件：58.41 Kbytes Page：1 Pages

SANREX

三社

PD200GB40

THYRISTOR MODULE

文件：116.06 Kbytes Page：2 Pages

SANREX

三社

PD200GB80

THYRISTOR MODULE

文件：116.06 Kbytes Page：2 Pages

SANREX

三社

PD200HB120

THYRISTOR MODULE

文件：110.21 Kbytes Page：2 Pages

SANREX

三社

PD200HB160

THYRISTOR MODULE

文件：110.21 Kbytes Page：2 Pages

SANREX

三社

PD200KN16

200竊?Avg 1600 竊턮lts

文件：157.54 Kbytes Page：2 Pages

NIEC

PD200KN16

Diode

文件：229.52 Kbytes Page：2 Pages

KSS

京瓷

PD200KN16_15

DIODE

文件：157.54 Kbytes Page：2 Pages

NI

恩艾

PD200KN8

DIODE

文件：158.32 Kbytes Page：2 Pages

NI

恩艾

PD200KN8_15

DIODE

文件：158.32 Kbytes Page：2 Pages

NI

恩艾

PD200S16

Diode

文件：847.67 Kbytes Page：5 Pages

KSS

京瓷

PD200S16

200A Avg 1600 Volts

文件：126.63 Kbytes Page：2 Pages

NIEC

PD200S16_15

DIODE

文件：126.63 Kbytes Page：2 Pages

NI

恩艾

PD200S8

Diode

文件：611.99 Kbytes Page：5 Pages

KSS

京瓷

PD200S8

200A Avg 800 Volts

文件：83.83 Kbytes Page：1 Pages

NIEC

PD200S8_15

DIODE

文件：83.83 Kbytes Page：1 Pages

NI

恩艾

200

Bulk Metal® Foil Technology Conformally Coated Precision Current Sensing Resistors with TCR of 5 ppm/°C and values down to 5 mΩ

文件：105.62 Kbytes Page：4 Pages

VishayVishay Siliconix

威世威世科技公司

200

TOGGLE SWITCHES - SUB MINIATURE

文件：718.4 Kbytes Page：5 Pages

E-SWITCH

200

Easy Identification and Tracing with 10-color Cable

文件：1.18408 Mbytes Page：2 Pages

ARIES

200

100/200

文件：3.83844 Mbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

200

Resistant to tears and punctures

文件：225.28 Kbytes Page：2 Pages

LSTD

莱尔德

PD200产品属性

  • 类型

    描述

  • 型号

    PD200

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Plate Capacitors with Contoured Rim - Class 1 Ceramic

PD200供应商更多...

更新时间：2025-10-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
PD20015-E
ST(意法)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
上海意淼电子科技有限公司
PD2008
日本株式会英达厂家二极管模块
23+
NA
20000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
PD20012
NIEC
24+
module
6000
全新原装正品现货 假一赔佰
询价
深圳市科芯源微电子有限公司
PD200HB160
SANREX/三社
25+
原厂原封可拆样
54285
百分百原装现货 实单必成 欢迎询价
询价
深圳市威雅利发展有限公司
PD200KN16
KYOCERA
21+
IGBT
250
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
中天科工半导体（深圳）有限公司
PD20010-E
ST专家
20+
PowerSO-10R.F.(gullw
69052
原装优势主营型号-可开原型号增税票
询价
江苏芯钻时代电子科技有限公司
PD200GB80
SanRex
24+
MODULE
1000
全新原装现货
询价
深圳市正纳电子有限公司
PD20015-E
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
深圳市毅创腾电子科技有限公司
PD200S16
NIEC
23+
模块
240
全新原装正品,量大可订货!可开17%增值票!价格优势!
询价
深圳市赛特兴科技有限公司
PD20015-E
ST/意法半导体
23+
10RF-Formed-4
12820
正规渠道,只有原装!
询价

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