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PD200价格
参考价格:¥75.5727
型号:PD20010-E 品牌:STMicroelectronics 备注:这里有PD200多少钱,2025年最近7天走势,今日出价,今日竞价,PD200批发/采购报价,PD200行情走势销售排行榜,PD200报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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PD200 | PlateCapacitorswithContouredRim-Class1Ceramic 文件:122.13 Kbytes Page:3 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
DIODEMODULE200A/1200to1600V FEATURES *IsolatedBase *DualDiodesCathodeCommonandCascadedCircuit *HighSurgeCapability *ULRecognized,FileNo.E187184 TYPICALAPPLICATIONS *RectifiedForGeneralUse | NIEC Nihon Inter Electronics Corporation | |||
RFpowertransistor,LdmoSTfamily Description ThePD20015CisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto2GHz.PD20015Cboaststheexcellen | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
RFpowertransistor,LdmoSTfamily Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
RFpowertransistor,LdmoSTfamily Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
RFpowertransistor,LdmoSTfamily Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
RFpowertransistor,LdmoSTfamily Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
DIODEMODULE200A/1200to1600V FEATURES *IsolatedBase *DualDiodesCathodeCommonandCascadedCircuit *HighSurgeCapability *ULRecognized,FileNo.E187184 TYPICALAPPLICATIONS *RectifiedForGeneralUse | NIEC Nihon Inter Electronics Corporation | |||
200竊?Avg800竊턮lts DIODE 200AAvg800Volts | NIEC Nihon Inter Electronics Corporation | |||
Diode DIODE 200AAvg800Volts | KSSKyocera Kinseki Corpotation 京瓷京瓷株式会社 | |||
封装/外壳:PowerSO-10RF 裸露底部焊盘(2 条直引线) 包装:托盘 描述:TRANS RF N-CH FET POWERSO-10RF 分立半导体产品 晶体管 - FET,MOSFET - 射频 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
封装/外壳:PowerSO-10RF 裸露底部焊盘(2 条直引线) 包装:卷带(TR) 描述:TRANS N-CH 40V POWERSO-10RF STR 分立半导体产品 晶体管 - FET,MOSFET - 射频 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
200AAvg12001600Volts 文件:153.57 Kbytes Page:2 Pages | NIEC Nihon Inter Electronics Corporation | |||
200AAvg12001600Volts 文件:153.57 Kbytes Page:2 Pages | NIEC Nihon Inter Electronics Corporation | |||
DIODE 文件:776.2 Kbytes Page:2 Pages | NI National Instruments Inc. | |||
200AAvg800Volts 文件:156.44 Kbytes Page:2 Pages | NIEC Nihon Inter Electronics Corporation | |||
DIODEMODULE200A/800V 文件:204.75 Kbytes Page:3 Pages | NIEC Nihon Inter Electronics Corporation | |||
THYRISTOR/DIODE(ISOLATEDTYPE) 文件:58.41 Kbytes Page:1 Pages | SANREX Sansha Electric Mfg. Co. Ltd. | |||
THYRISTOR/DIODE(ISOLATEDTYPE) 文件:58.41 Kbytes Page:1 Pages | SANREX Sansha Electric Mfg. Co. Ltd. | |||
THYRISTOR/DIODE(ISOLATEDTYPE) 文件:58.41 Kbytes Page:1 Pages | SANREX Sansha Electric Mfg. Co. Ltd. | |||
THYRISTOR/DIODE(ISOLATEDTYPE) 文件:58.41 Kbytes Page:1 Pages | SANREX Sansha Electric Mfg. Co. Ltd. | |||
THYRISTORMODULE 文件:116.06 Kbytes Page:2 Pages | SANREX Sansha Electric Mfg. Co. Ltd. | |||
THYRISTORMODULE 文件:116.06 Kbytes Page:2 Pages | SANREX Sansha Electric Mfg. Co. Ltd. | |||
THYRISTORMODULE 文件:110.21 Kbytes Page:2 Pages | SANREX Sansha Electric Mfg. Co. Ltd. | |||
THYRISTORMODULE 文件:110.21 Kbytes Page:2 Pages | SANREX Sansha Electric Mfg. Co. Ltd. | |||
200竊?Avg1600竊턮lts 文件:157.54 Kbytes Page:2 Pages | NIEC Nihon Inter Electronics Corporation | |||
Diode 文件:229.52 Kbytes Page:2 Pages | KSSKyocera Kinseki Corpotation 京瓷京瓷株式会社 | |||
DIODE 文件:157.54 Kbytes Page:2 Pages | NI National Instruments Inc. | |||
DIODE 文件:158.32 Kbytes Page:2 Pages | NI National Instruments Inc. | |||
DIODE 文件:158.32 Kbytes Page:2 Pages | NI National Instruments Inc. | |||
200AAvg1600Volts 文件:126.63 Kbytes Page:2 Pages | NIEC Nihon Inter Electronics Corporation | |||
Diode 文件:847.67 Kbytes Page:5 Pages | KSSKyocera Kinseki Corpotation 京瓷京瓷株式会社 | |||
DIODE 文件:126.63 Kbytes Page:2 Pages | NI National Instruments Inc. | |||
Diode 文件:611.99 Kbytes Page:5 Pages | KSSKyocera Kinseki Corpotation 京瓷京瓷株式会社 | |||
200AAvg800Volts 文件:83.83 Kbytes Page:1 Pages | NIEC Nihon Inter Electronics Corporation | |||
DIODE 文件:83.83 Kbytes Page:1 Pages | NI National Instruments Inc. | |||
EasyIdentificationandTracingwith10-colorCable 文件:1.18408 Mbytes Page:2 Pages | ARIES Aries Electronics,inc | |||
Resistanttotearsandpunctures 文件:225.28 Kbytes Page:2 Pages | LSTD Laird Tech Smart Technology | |||
TOGGLESWITCHES-SUBMINIATURE 文件:718.4 Kbytes Page:5 Pages | E-SWITCH E-switch | |||
BulkMetal®FoilTechnologyConformallyCoatedPrecisionCurrentSensingResistorswithTCRof5ppm/°Candvaluesdownto5mΩ 文件:105.62 Kbytes Page:4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
100/200 文件:3.83844 Mbytes Page:2 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |
PD200产品属性
- 类型
描述
- 型号
PD200
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Plate Capacitors with Contoured Rim - Class 1 Ceramic
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
日本株式会英达厂家二极管模块 |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
SANREX/三社 |
25+ |
原厂原封可拆样 |
54285 |
百分百原装现货 实单必成 欢迎询价 |
|||
SanRex |
24+ |
MODULE |
1000 |
全新原装现货 |
|||
模块 |
1950+ |
980 |
只做原装正品现货!或订货假一赔十! |
||||
KYOCERA |
21+ |
IGBT |
250 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
PowerSO |
6000 |
原装正品,支持实单 |
|||
KYOCERA AVX |
24+ |
模块 |
30000 |
二极管-分立半导体产品-原装正品 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ST/意法 |
24+ |
PowerSO |
45000 |
只做原装正品现货 欢迎来电查询15919825718 |
PD200规格书下载地址
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DdatasheetPDF页码索引
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