位置:PD20015STR-E > PD20015STR-E详情

PD20015STR-E中文资料

厂家型号

PD20015STR-E

文件大小

352.27Kbytes

页面数量

16

功能描述

RF power transistor, LdmoST family

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

PD20015STR-E数据手册规格书PDF详情

Description

The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20015-E’s superior linearity performance makes it an ideal solution for mobile radio applications.

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V

■ Plastic package

■ ESD protection

■ In compliance with the 2002/95/EC European directive

PD20015STR-E产品属性

  • 类型

    描述

  • 型号

    PD20015STR-E

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    RF power transistor, LdmoST family

更新时间:2025-10-16 11:04:00
供应商 型号 品牌 批号 封装 库存 备注 价格
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23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
SANREX/三社
25+
原厂原封可拆样
64586
百分百原装现货 实单必成
XTW
24+
QFN
30141
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SOP-8P
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自己现货
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MODULE
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