Description

The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology.

PD20015C’s superior linearity performance makes it an ideal solution for mobile application.

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V

■ BeO free package

■ ESD protection

■ In compliance with the 2002/95/EC european directive