60 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

60 V, 1 A PNP low VCEsat (BISS) transistor

60 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT346 (SC-59A) Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4160K. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High co

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN. 2. Features and benefits • Very low collec

60 V, 1 A PNP/PNP low VCEsat double transistor

Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • Qualified accordi

60 V, 1 A PNP/PNP low VCEsat double transistor

Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • Exposed heat sink for excellent thermal and electrical conductivity •

60 V, 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4160QA. 2. Features and benefits • Very low collector-

60 V, 1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency due to less heat generation * Reduces Printed-Circuit Board (PCB) area required * Cost-effective replacement for medium power transistors BCP52 and BCX52

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

TRANSISTOR(PNP)

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting LCD back-lighting Supply line switching circuits.

60 V, 1 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4160T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required •

60 V, 1 A PNP low VCEsat (BISS) transistor

60 V, 1 A PNP low VCEsat (BISS) transistor

1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160U. 1.2 Features n Low collector-emitter saturation voltage VCEsat n High collector current capability I

60 V, 1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency leading to less heat generation * Reduces printed-circuit board area required * Cost effective replacement for medium power transistors BCP52 and BCX52

60 V, 1 A PNP low VCEsat (BISS) transistor

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

文件：148.63 Kbytes Page：14 Pages

60 V, 1 A PNP/PNP low VCEsat transistor

60 V, 1 A PNP low VCEsat (BISS) transistor

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

文件：763.04 Kbytes Page：19 Pages

60 V, 1 A PNP low VCEsat (BISS) transistor

封装/外壳：3-XDFN 裸露焊盘 包装：散装 描述：TRANS PNP 60V 1A DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Transistors

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60 V, 1 A PNP low VCEsat (BISS) transistor

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PNP Transistors

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60 V, 1 A PNP low VCEsat (BISS) transistor

文件：134.62 Kbytes Page：14 Pages

60 V, 1 A PNP low VCEsat (BISS) transistor

文件：153.79 Kbytes Page：14 Pages

RECTIFIERS

DESCRIPTION These series of high current rectifiers offers opportunity for size and weight reduction in high power supplies. FEATURES • Rating: 12A • Controlled Avalanche • Miniature Package • Surge Rating: 200A

20 (7/28) AWG Tinned Copper

文件：412.17 Kbytes Page：4 Pages

ELECTRIC FUEL PUMP

文件：173.81 Kbytes Page：4 Pages

2.5-Amp Gate Drive Optocoupler with Integrated (VCE) Desaturation Detection and Fault Status Feedback

文件：2.20399 Mbytes Page：36 Pages

2.5 Amp Gate Drive Optocoupler with Integrated (VCE) Desaturation Detection and Fault Status Feedback

文件：557.46 Kbytes Page：33 Pages