60 V, 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4160QA. 2. Features and benefits • Very low collector-

60 V, 1 A PNP low VCEsat (BISS) transistor

60 V, 1 A PNP low VCEsat (BISS) transistor

封装/外壳：3-XDFN 裸露焊盘 包装：散装 描述：TRANS PNP 60V 1A DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

RECTIFIERS

DESCRIPTION These series of high current rectifiers offers opportunity for size and weight reduction in high power supplies. FEATURES • Rating: 12A • Controlled Avalanche • Miniature Package • Surge Rating: 200A

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