60 V, 1 A PNP low VCEsat (BISS) transistor

丝印代码：53；60 V, 1 A PNP low VCEsat (BISS) transistor

1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160U. 1.2 Features n Low collector-emitter saturation voltage VCEsat n High collector current capability I

60 V, 1 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4160U. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualifie;

60 V, 1 A PNP low VCEsat transistor

PNP low VCEsat transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Qualified accordi;

封装/外壳：SC-70，SOT-323 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 60V 0.7A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60 V, 1 A PNP low VCEsat (BISS) transistor

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Silicon planar type

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