60 V, 1 A PNP low VCEsat (BISS) transistor

60 V, 1 A PNP low VCEsat (BISS) transistor

1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160U. 1.2 Features n Low collector-emitter saturation voltage VCEsat n High collector current capability I

60 V, 1 A PNP low VCEsat (BISS) transistor

封装/外壳：SC-70，SOT-323 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 60V 0.7A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60 V, 1 A PNP low VCEsat (BISS) transistor

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60 V, 1 A PNP low VCEsat transistor

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DESCRIPTION These series of high current rectifiers offers opportunity for size and weight reduction in high power supplies. FEATURES • Rating: 12A • Controlled Avalanche • Miniature Package • Surge Rating: 200A

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