General description

PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT346 (SC-59A) Surface Mounted Device (SMD) plastic package.

NPN complement: PBSS4160K.

Features

■ Low collector-emitter saturation voltage VCEsat

■ High collector current capability: IC and ICM

■ High collector current gain (hFE) at high IC

■ High efficiency due to less heat generation

■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications

■ High voltage DC-to-DC conversion

■ High voltage MOSFET gate driving

■ High voltage motor control

■ High voltage power switches (e.g. motors, fans)

■ Automotive applications