60 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

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60 V, 1 A PNP/PNP low VCEsat transistor

RECTIFIERS

DESCRIPTION These series of high current rectifiers offers opportunity for size and weight reduction in high power supplies. FEATURES • Rating: 12A • Controlled Avalanche • Miniature Package • Surge Rating: 200A

20 (7/28) AWG Tinned Copper

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