型号 功能描述 生产厂家 企业 LOGO 操作
NVMFD5C446NL

MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

ONSEMI

安森美半导体

NVMFD5C446NL

双 N 沟道,功率 MOSFET,40V,145A,2.65mΩ

ONSEMI

安森美半导体

MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

ONSEMI

安森美半导体

MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

ONSEMI

安森美半导体

Power MOSFET 40 V, 2.9 m, 127 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 101A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

MOSFET ??Power, Single N-Channel 40 V, 3.5 m, 101 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel 40 V, 3.5 m, 110 A

文件:233.02 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Dual, N-Channel 40 V, 2.65 m, 145 A

文件:231.85 Kbytes Page:7 Pages

ONSEMI

安森美半导体

更新时间:2025-12-26 18:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
1809+
DFN8
300
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ONSEMI/安森美
22+
DFN5X6
18500
原装正品支持实单
ON
23+
DFN
6850
只做原装正品假一赔十为客户做到零风险!!
ON
23+
DFN8
300
正规渠道,只有原装!
ON
21+
DFN8
3000
新到现货 全新原装
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON(安森美)
24+
DFN-8
32000
全新原厂原装正品现货,低价出售,实单可谈
ON(安森美)
26+
NA
60000
只有原装 可配单
ON/安森美
2223+
26800
只做原装正品假一赔十为客户做到零风险
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品

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