Power MOSFET 40 V, 2.9 m, 127 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

双 N 沟道功率 MOSFET 40V，127A， 2.9mΩ

MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

丝印代码：5C446L；MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

丝印代码：446LWF；MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

丝印代码：5C446N；Power MOSFET 40 V, 2.9 m, 127 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

丝印代码：446NWF；Power MOSFET 40 V, 2.9 m, 127 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

双 N 沟道，功率 MOSFET，40V，145A，2.65mΩ

MOSFET ??Power, Single N-Channel 40 V, 3.5 m, 101 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MOSFET ??Power, Single, N-Channel 40 V, 3.5 m, 110 A

文件：233.02 Kbytes Page：7 Pages

MOSFET ??Power, Dual, N-Channel 40 V, 2.65 m, 145 A

文件：231.85 Kbytes Page：7 Pages