MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 151 nC) • High Speed Switching with Low Capacitance (Coss = 244 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are RoHS Compliant Typical Applications • Automotive On Board C

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3S, TO-247-4

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 151 nC) • High Speed Switching with Low Capacitance (Coss = 244 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3S, TO-247-4

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 151 nC) • High Speed Switching with Low Capacitance (Coss = 244 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Low Switching Losses (Typ. EON 490 J at 40 A, 800 V) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on Second Level Interconnection) Typical Applications • Solar Inverters • Electric V

MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A

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