MOSFET – Power, N-Channel 100 V, 23 A, 55 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =55mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

单 N 沟道，功率 MOSFET，100V，23A，55mΩ

MOSFET – Power, N-Channel 100 V, 23 A, 55 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

N-Channel Power MOSFET 100 V, 23 A, 56 m Logic Level

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N-Channel Power MOSFET

文件：78.19 Kbytes Page：6 Pages

N-Channel Power MOSFET 100 V, 23 A, 56 m Logic Level

文件：127.16 Kbytes Page：6 Pages

N-Channel Power MOSFET

文件：78.19 Kbytes Page：6 Pages

N-Channel 100-V (D-S) MOSFET

文件：983.99 Kbytes Page：8 Pages

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-3.3A (VGS =-10V) ● RDS(ON)

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO6415 is Pb-free (meets ROH

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-3.3A (VGS =-10V) ● RDS(ON)

CUSTOMER PRODUCT SPECIFICATION

文件：73.52 Kbytes Page：1 Pages

20V P-Channel MOSFET

文件：316.5 Kbytes Page：5 Pages