Bidirectional Thyristor Diodes (SIDAC)

Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance re

Bi-Directional Diode Thyristor (SIDAC)

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO6415 is Pb-free (meets ROH

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-3.3A (VGS =-10V) ● RDS(ON)

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-3.3A (VGS =-10V) ● RDS(ON)

CUSTOMER PRODUCT SPECIFICATION

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20V P-Channel MOSFET

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