isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 123A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 123A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.7mΩ(Max)@VGS= 10V DESCRIPTION ·Power Supplies ·Inductive Loads ·Power Motor Control

功率 MOSFET，40V，123A，3.7 mΩ，单 N 沟道，DPAK，逻辑电平。

Power MOSFET 40 V, 3.7 m, 123 A, Single N.Channel DPAK

文件：100.68 Kbytes Page：4 Pages

Power MOSFET 40 V, 3.7 m, 123 A, Single N.Channel DPAK

文件：100.68 Kbytes Page：4 Pages

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Frequently applied in non-impact printer systems, the UCN5890A, UCN5890LW, UCN5891A, and UCN5891LW are BiMOS II serial-input, latched source (high-side) drivers. The octal, high-current smart-power ICs merge an 8-bit CMOS shift register, associated CMOS latches, and CMOS control logic (strobe and

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Frequently applied in non-impact printer systems, the UCN5890A, UCN5890LW, UCN5891A, and UCN5891LW are BiMOS II serial-input, latched source (high-side) drivers. The octal, high-current smart-power ICs merge an 8-bit CMOS shift register, associated CMOS latches, and CMOS control logic (strobe and

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