isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 60 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.1mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，60V，82A，7.1mΩ，单 N 沟道，DPAK，逻辑电平

Single N?묬hannel Power MOSFET

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N-channel Enhancement Mode Power MOSFET

Features  VDS= 60 V, ID= 80 A RDS(ON)

Single N?묬hannel Power MOSFET

文件：138.5 Kbytes Page：6 Pages

N-Channel 60 V (D-S) 175 째C MOSFET

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MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diod Features • DC / DC converter applications. • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • 2.5V drive. • [SBD] • Shor

8192 word x 8-bit High Speed CMOS Static RAM

Description CXK5863AP / AJ are 65,536 bits high speed CMOS static RAMS organized as 8,192 words by 8-bits and operate from a singel 5V supply. These devices are suitable for use in high speed applications such as cash memory.

8192 word x 8-bit High Speed CMOS Static RAM

Description CXK5863AP / AJ are 65,536 bits high speed CMOS static RAMS organized as 8,192 words by 8-bits and operate from a singel 5V supply. These devices are suitable for use in high speed applications such as cash memory.

8192 word x 8-bit High Speed CMOS Static RAM

Description CXK5863AP / AJ are 65,536 bits high speed CMOS static RAMS organized as 8,192 words by 8-bits and operate from a singel 5V supply. These devices are suitable for use in high speed applications such as cash memory.

Relay Module

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