isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 123A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.7mΩ(Max)@VGS= 10V DESCRIPTION ·Power Supplies ·Inductive Loads ·Power Motor Control

Power MOSFET

Power MOSFET

文件：81.7 Kbytes Page：7 Pages

APC5830 DE-COMPRESSION VOICE IC

CHIP FEATURES. ● DUAL OPERATION FREQUENCIES: - 32.768 KHZ & 0.5 SECOND TIMER INTERRUPT. - BUILT-IN PLL CIRCUIT TO GENERATE SYSTEM CLOCK MAX 20MHZ. ● BUILT-IN 2KBYTES(1K*16) RAM. ● ADDRESS UP TO 8MBYTE(4M*16) RAM OR ROM OR “ROM AND RAM” BUILT-IN 16KBYTE(8K*16) PROGRAM ROM AND

Stud Mount Standard Recovery Silicon Rectifiers, 3 Amp

Description: The NTE5830 through NTE5849 are silicon rectifiers in a D04 type package designed for use in power supplies and other applications having need of a device with the following features: ● High Current to Small Size ● High Surge Current Capability ● Low Forward Voltage Drop

High-speed, 8-bit Variable-length Shift Register

文件：228.18 Kbytes Page：8 Pages

5.0 WATT 6.8 - 270 VOLTS ZENER DIODES

文件：88.42 Kbytes Page：2 Pages

HIGH FIDELITY Power Speech

文件：123.27 Kbytes Page：14 Pages