型号 功能描述 生产厂家 企业 LOGO 操作
NVD5803N

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 85A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NVD5803N

Power MOSFET 40V, 85A, 5.7 mOhm, Single N-Channel, DPAK.

ONSEMI

安森美半导体

NVD5803N

Power MOSFET 40 V, 85 A, Single N?묬hannel, DPAK

文件:106.47 Kbytes Page:6 Pages

ONSEMI

安森美半导体

NVD5803N

Power MOSFET

文件:77.22 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:77.22 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:77.22 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 85 A, Single N?묬hannel, DPAK

文件:106.47 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Power MOSFET(Vdss=-40V)

Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

IRF

High Voltage Color Display Horizontal Deflection Output(No Damper Diode)

High Voltage Color Display Horizontal Deflection Output (No Damper Diode) • High Breakdown Voltage : BVCBO=1500V • High Speed Switching : tF=0.1µs (Typ.) • Wide S.O.A • For C-Monitor(85KHz)

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

DC / DC Converter Applications

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-Channel Sillicon MOSFET (MCH3408) and a Schottky Barrier Diode (SBS006M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed swi

SANYO

三洋

Multi-function Digital Filter for Digital Audio

OVERVIEW The SM5803AP/APT is a multi-function digital filter for digital audio fabricated using NPCs original molybdenum-gate CMOS technology.

NPC

Multi-function Digital Filter for Digital Audio

OVERVIEW The SM5803AP/APT is a multi-function digital filter for digital audio fabricated using NPCs original molybdenum-gate CMOS technology.

NPC

NVD5803N产品属性

  • 类型

    描述

  • 型号

    NVD5803N

  • 功能描述

    MOSFET NFET DPAK 40V 85A 5.7 MOHM

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-17 9:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
24+/25+
4495
原装正品现货库存价优
ON(安森美)
24+
标准封装
47048
全新原装正品/价格优惠/质量保障
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON(安森美)
23+
12202
公司只做原装正品,假一赔十
ON
22+
TO-252
20000
公司只做原装 品质保障
ON/安森美
23+
DPAK-3
89630
当天发货全新原装现货
三年内
1983
只做原装正品
ON
23+
TO-252
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
ON/安森美
20+
TO-252
36900
原装优势主营型号-可开原型号增税票

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