Power MOSFET(Vdss=-40V)

Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

采用 TSOP-6（Micro 6）封装的 -40V 单 P 沟道功率 MOSFET

FETKY??MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm)

VDSS = -40V RDS(on) = 112mΩ Schottky Vf = 0.51V Description The FETKY™ family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to ach

FETKY 짰MOSFET & Schottky Diode

VDSS = -40V RDS(on) = 112mΩ Schottky Vf = 0.51V Description The FETKY™ family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to ach

Ultra Low On-Resistance

Description These P-channel HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicatio

Ideal For Buck Regulator Applications

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Co-packaged HEXFET Power

文件：159.3 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：302.1 Kbytes Page：10 Pages

Ultra Low On-Resistance

文件：207.68 Kbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.98673 Mbytes Page：9 Pages

HEXFET

Power MOSFET

文件：207.68 Kbytes Page：9 Pages

High Voltage Color Display Horizontal Deflection Output(No Damper Diode)

High Voltage Color Display Horizontal Deflection Output (No Damper Diode) • High Breakdown Voltage : BVCBO=1500V • High Speed Switching : tF=0.1µs (Typ.) • Wide S.O.A • For C-Monitor(85KHz)

DC / DC Converter Applications

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-Channel Sillicon MOSFET (MCH3408) and a Schottky Barrier Diode (SBS006M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed swi

Multi-function Digital Filter for Digital Audio

OVERVIEW The SM5803AP/APT is a multi-function digital filter for digital audio fabricated using NPCs original molybdenum-gate CMOS technology.

Multi-function Digital Filter for Digital Audio

OVERVIEW The SM5803AP/APT is a multi-function digital filter for digital audio fabricated using NPCs original molybdenum-gate CMOS technology.