30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

Power MOSFET 30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 79A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Single N-Channel Power MOSFET 30V, 76A, 6mΩ

Power MOSFET 30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC

30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

N-Channel 30-V (D-S) MOSFET

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Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitat

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitat

STS-48/STM-16 SONET/SDH Framer and ATM/POS Mapper

[AMCC} Features • Provides two SONET/SDH line interface modes of operation: single STS-48/STM-16 or quad STS-12/STM-4s. • Processes any valid combination of SONET/SDH STS-48c/AU-4-16c, STS-12c/AU-4-4c, STS-3c/AU-4, or STS-1/AU-3 tributaries within an STS-48/STM-16 or STS-12/STM-4. •

Multiple Function Double Ended PWM Controller

Description The SC4806 is a double ended, high speed, highly integrated PWM controller optimized for applications requiring minimum space. The device is easily configurable for current mode or voltage mode operation and contains all the control circuitry required for isolated applications, where

POWER ZENERS

POWER ZENERS 5 Watt, Industrial