型号 功能描述 生产厂家 企业 LOGO 操作
AO4806

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitat

AOSMD

万国半导体

AO4806

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 9.4 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

AO4806

Dual N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

AO4806

20V Dual N-Channel MOSFET

文件:177.42 Kbytes Page:4 Pages

AOSMD

万国半导体

AO4806

低压MOSFET (12V - 30V)

AOS

美国万代

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 9.4 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitat

AOSMD

万国半导体

20V Dual N-Channel MOSFET

文件:177.42 Kbytes Page:4 Pages

AOSMD

万国半导体

STANDARD SERIES

文件:242.15 Kbytes Page:1 Pages

ASSUN

HIGH POWER SERIES

文件:230.53 Kbytes Page:1 Pages

ASSUN

HIGH TEMPERATURE SERIES

文件:311.41 Kbytes Page:1 Pages

ASSUN

BUILT-IN SERVO DRIVE INTEGRATED MOTOR-Brushless

文件:2.86455 Mbytes Page:1 Pages

ASSUN

BUILT-IN SERVO DRIVE INTEGRATED MOTOR-Brushless

文件:2.66633 Mbytes Page:1 Pages

ASSUN

AO4806产品属性

  • 类型

    描述

  • 型号

    AO4806

  • 功能描述

    MOSFET DUAL N-CH 20V 9.4A 8-SOIC

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 阵列

  • 系列

    -

  • 产品目录绘图

    8-SOIC Mosfet Package

  • 标准包装

    1

  • 系列

    - FET

  • 2 个 N 沟道(双) FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    60V 电流 - 连续漏极(Id) @ 25°

  • C

    3A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    75 毫欧 @ 4.6A,10V Id 时的

  • Vgs(th)(最大)

    3V @ 250µA 闸电荷(Qg) @

  • Vgs

    20nC @ 10V 输入电容(Ciss) @

  • Vds

    - 功率 -

  • 最大

    1.4W

  • 安装类型

    表面贴装

  • 封装/外壳

    PowerPAK? SO-8

  • 供应商设备封装

    PowerPAK? SO-8

  • 包装

    Digi-Reel®

  • 产品目录页面

    1664(CN2011-ZH PDF)

  • 其它名称

    SI7948DP-T1-GE3DKR

更新时间:2026-3-1 21:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS/万代
2023+
SOIC-8L
6000
原厂全新正品旗舰店优势现货
AOS万代
100000
代理渠道/只做原装/可含税
AOS/万代
21+
SOIC-8L
12820
只做原装,质量保证
ALPHA
24+
SMD
1215
AO
09+
SOP-8
1800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AOSMD
22+
SOP-8
8200
原装现货库存.价格优势!!
AOS/万代
2019+
SOP8
3333
原厂渠道 可含税出货
AOS/万代
23+
SO-8
24190
原装正品代理渠道价格优势
AOS
26+
TO-92
86720
全新原装正品价格最实惠 假一赔百
AOS/万代
25+
SOP-8
155503
明嘉莱只做原装正品现货

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