型号 功能描述 生产厂家 企业 LOGO 操作
AO4806

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitat

AOSMD

万国半导体

AO4806

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 9.4 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

AO4806

Dual N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

AO4806

20V Dual N-Channel MOSFET

文件:177.42 Kbytes Page:4 Pages

AOSMD

万国半导体

AO4806

低压MOSFET (12V - 30V)

AOS

美国万代

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 9.4 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitat

AOSMD

万国半导体

20V Dual N-Channel MOSFET

文件:177.42 Kbytes Page:4 Pages

AOSMD

万国半导体

STANDARD SERIES

文件:242.15 Kbytes Page:1 Pages

ASSUN

HIGH POWER SERIES

文件:230.53 Kbytes Page:1 Pages

ASSUN

HIGH TEMPERATURE SERIES

文件:311.41 Kbytes Page:1 Pages

ASSUN

BUILT-IN SERVO DRIVE INTEGRATED MOTOR-Brushless

文件:2.86455 Mbytes Page:1 Pages

ASSUN

BUILT-IN SERVO DRIVE INTEGRATED MOTOR-Brushless

文件:2.66633 Mbytes Page:1 Pages

ASSUN

AO4806产品属性

  • 类型

    描述

  • 型号

    AO4806

  • 功能描述

    MOSFET DUAL N-CH 20V 9.4A 8-SOIC

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 阵列

  • 系列

    -

  • 产品目录绘图

    8-SOIC Mosfet Package

  • 标准包装

    1

  • 系列

    - FET

  • 2 个 N 沟道(双) FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    60V 电流 - 连续漏极(Id) @ 25°

  • C

    3A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    75 毫欧 @ 4.6A,10V Id 时的

  • Vgs(th)(最大)

    3V @ 250µA 闸电荷(Qg) @

  • Vgs

    20nC @ 10V 输入电容(Ciss) @

  • Vds

    - 功率 -

  • 最大

    1.4W

  • 安装类型

    表面贴装

  • 封装/外壳

    PowerPAK? SO-8

  • 供应商设备封装

    PowerPAK? SO-8

  • 包装

    Digi-Reel®

  • 产品目录页面

    1664(CN2011-ZH PDF)

  • 其它名称

    SI7948DP-T1-GE3DKR

更新时间:2025-11-23 14:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS/万代
23+
SOIC-8L
8435
原装正品现货假一赔十
ALPHA
24+
SMD
1215
AOS
21+
SOIC-8L
6000
只做原装,一定有货,不止网上数量,量多可订货!
AOS/万代
25+
SOP-8
32115
AOS/万代全新特价AO4806即刻询购立享优惠#长期有货
AOSMD
22+
SOP-8
8200
原装现货库存.价格优势!!
AOS
12+
SOP8
400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AO
2223+
SOP-8
26800
只做原装正品假一赔十为客户做到零风险
AOS/万代
2025+
SO-8
5000
原装进口价格优 请找坤融电子!
Aos
24+
SOP-8
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
NK/南科功率
2025+
SO-8
986966
国产

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