MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 95A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

Power MOSFET

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P-Channel Enhancement Mode Power MOSFET

Description The 4805 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features VDS = -30V,ID = - 8.0A RDS(ON)typ 17mΩ @ VGS= -10V

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