MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

Power MOSFET

文件：122.57 Kbytes Page：8 Pages

Power MOSFET

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 150A RDS(ON)

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

N-Channel 30-V (D-S) MOSFET

文件：1.00247 Mbytes Page：7 Pages

Power MOSFET 30 V, 88 A, Single N?묬hannel, DPAK/IPAK

文件：80.75 Kbytes Page：8 Pages

Power MOSFET

文件：122.57 Kbytes Page：8 Pages