MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 80 m

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

Silicon Carbide (SiC) MOSFETs

MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 1200 V, 80 m, 30 A

文件：240.79 Kbytes Page：8 Pages

丝印代码：NTHL080N120SC1A；MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A

文件：288.69 Kbytes Page：7 Pages

MOSFET ??SiC Power, Single N-Channel, D2PAK-7L

文件：242.3 Kbytes Page：8 Pages

MOSFET - SiC Power, Single N-Channel

文件：377.47 Kbytes Page：7 Pages

丝印代码：NVHL080N120SC1A；MOSFET - SiC Power, Single N-Channel

文件：297 Kbytes Page：7 Pages