MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 80 m

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

Silicon Carbide (SiC) MOSFETs

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typic

Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typic

SiC N-Channel MOSFET

FEATURES ·Low Effective Output Capacitance ·Ultra Low Gate Charge APPLICATIONS ·Main Inverters ·General Purpose Inverters ·DC/DC Converter ·UPS

MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 1200 V, 80 m, 30 A

文件：240.79 Kbytes Page：8 Pages

MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 80 m

文件：273.17 Kbytes Page：8 Pages