MOSFET??N?륝hannel,SiliconCarbide1200V,80m

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,D2PAK-7L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(Typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(Typ.Coss=79pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typic

SiliconCarbide(SiC)MOSFET–EliteSiC,80mohm,1200V,M1,TO-247-3L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,80m,30A

文件：240.79 Kbytes Page：8 Pages

MOSFET??N?륝hannel,SiliconCarbide1200V,80m

文件：273.17 Kbytes Page：8 Pages

MOSFET-SiCPower,SingleN-Channel1200V,80m,31A

文件：374.19 Kbytes Page：7 Pages