位置：首页 > IC中文资料 > NTBG080N120SC1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NTBG080N120SC1 | Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typic | ONSEMI 安森美半导体 |   | |
NTBG080N120SC1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typic | ONSEMI 安森美半导体 | | |
NTBG080N120SC1 | SiC N-Channel MOSFET FEATURES ·Low Effective Output Capacitance ·Ultra Low Gate Charge APPLICATIONS ·Main Inverters ·General Purpose Inverters ·DC/DC Converter ·UPS | ISC 无锡固电 | | |
NTBG080N120SC1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L | ONSEMI 安森美半导体 | | |
NTBG080N120SC1 | MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 1200 V, 80 m, 30 A 文件：240.79 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typic | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typic | ONSEMI 安森美半导体 | | ||
MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 80 m 文件：273.17 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ON(安森美) |
23+ |
D2PAK-7L |
15764 |
公司只做原装正品,假一赔十 |
|||
onsemi |
23+ |
D2PAK-7L |
1356 |
原厂正品现货SiC MOSFET全系列 |
|||
ON/安森美 |
22+ |
TO-263 |
9000 |
原装正品,支持实单! |
|||
onsemi(安森美) |
24+ |
D2PAK-7L |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
ON |
两年内 |
NA |
769 |
实单价格可谈 |
|||
ON(安森美) |
25+ |
TO-263 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
ON/安森美 |
24+ |
TO-263 |
2000 |
原装现货 假一罚十 |
|||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
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DdatasheetPDF页码索引
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