位置：首页 > IC中文资料第1759页 > NTP30N20
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NTP30N20 | Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 30 AMPERES 200 VOLTS 68 m @ VGS= 10 V (Typ) Features •Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode •Avalanche Energy Specified •IDSSand RDS(on)Specified at Elevated Temperature •Pb−Free Package is Avail | ONSEMI 安森美半导体 |   | |
NTP30N20 | Power MOSFET 30 Amps, 200 Volts N-Channel EnhancementïMode TO-220 Features • SourceïtoïDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • PbïFree Package is Available Applications • PWM Motor Controls • Power Supplies • Converters | ONSEMI 安森美半导体 | | |
NTP30N20 | Power MOSFET 200V 30A 81 mOhm Single N-Channel TO-220 | ONSEMI 安森美半导体 | | |
Power MOSFET 30 Amps, 200 Volts N-Channel EnhancementïMode TO-220 Features • SourceïtoïDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • PbïFree Package is Available Applications • PWM Motor Controls • Power Supplies • Converters | ONSEMI 安森美半导体 | | ||
N?묬hannel Enhancement?묺ode TO??20 N−Channel Enhancement−Mode TO−220 30 AMPERES 200 VOLTS 68 m @ VGS= 10 V (Typ) Features •Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode •Avalanche Energy Specified •IDSSand RDS(on)Specified at Elevated Temperature •Pb−Free Package is Avail | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 Amps, 200 Volts N-Channel EnhancementïMode TO-220 Features • SourceïtoïDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • PbïFree Package is Available Applications • PWM Motor Controls • Power Supplies • Converters | ONSEMI 安森美半导体 | | ||
N−Channel Enhancement−Mode TO−220 | ONSEMI 安森美半导体 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev | MICROSEMI 美高森美 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev | MICROSEMI 美高森美 | | ||
Power MOSFET 30 Amps, 200 Volts N?묬hannel Enhancement?묺ode D2PAK 文件：85.77 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
StarMOST Power MOSFET 文件：201.59 Kbytes Page：2 Pages | GOOD-ARK 固锝电子 | |
NTP30N20产品属性
- 类型
描述
- 型号
NTP30N20
- 功能描述
MOSFET 200V 30A N-Channel
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI |
25+ |
N/A |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ONSEMI |
25+ |
N/A |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON |
23+ |
65480 |
|||||
ON |
23+ |
TO-220 |
249 |
正规渠道,只有原装! |
|||
ON |
2025+ |
TO-220AB |
3577 |
全新原厂原装产品、公司现货销售 |
|||
ON/安森美 |
2450+ |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
||||
ON/ |
24+ |
TO-220 |
5000 |
全新原装正品,现货销售 |
|||
ON |
24+ |
TO-2203LEADSTANDA |
8866 |
||||
ON |
1728+ |
? |
7500 |
只做原装进口,假一罚十 |
NTP30N20规格书下载地址
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