功率 MOSFET，200V，30A，81mΩ，单 N 沟道，D2PAK

功率 MOSFET，200V，30A，N 沟道增强模式，D2PAK • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• IDSS and RDS(on) Specified at Elevated Temperature\n• Pb-Free Packages are Available;

Power MOSFET 30 Amps, 200 Volts N?묬hannel Enhancement?묺ode D2PAK

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Power MOSFET 30 Amps, 200 Volts

文件：73.52 Kbytes Page：8 Pages

Power MOSFET 30 Amps, 200 Volts

文件：73.52 Kbytes Page：8 Pages

Power MOSFET 30 Amps, 200 Volts

文件：73.52 Kbytes Page：8 Pages

Power MOSFET 30 Amps, 200 Volts N?묬hannel Enhancement?묺ode D2PAK

文件：85.77 Kbytes Page：8 Pages

Power MOSFET 30 Amps, 200 Volts

文件：73.52 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

Power MOSFET 30 Amps, 200 Volts

N−Channel Enhancement−Mode TO−220 30 AMPERES 200 VOLTS 68 m @ VGS= 10 V (Typ) Features •Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode •Avalanche Energy Specified •IDSSand RDS(on)Specified at Elevated Temperature •Pb−Free Package is Avail

StarMOST Power MOSFET

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