N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

N-Channel MOSFET

30A, 200V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC30N20 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(ON)

Power MOSFET 30 Amps, 200 Volts N-Channel EnhancementïMode TO-220

Features • SourceïtoïDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • PbïFree Package is Available Applications • PWM Motor Controls • Power Supplies • Converters

N-Channel 200 V (D-S) MOSFET

文件：1.60365 Mbytes Page：7 Pages

Panels and Panel Accessories

文件：2.00209 Mbytes Page：16 Pages

Panels and Panel Accessories

文件：2.00209 Mbytes Page：16 Pages