位置:首页 > IC中文资料第1759页 > NTP30N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NTP30N06 | Power MOSFET 30 Amps, 60 Volts 文件:72.83 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | ||
NTP30N06 | MOSFET N-CH 60V 27A TO220AB | ONSEMI 安森美半导体 | ||
Power MOSFET 30 Amps, 60 Volts, Logic Level Power MOSFET 30 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Co | ONSEMI 安森美半导体 | |||
N-Channel 60 V (D-S) MOSFET 文件:1.31343 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | |||
Power MOSFET 30 Amps, 60 Volts, Logic Level | ONSEMI 安森美半导体 | |||
Power MOSFET 文件:90.72 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
N-Channel 60 V (D-S) MOSFET 文件:1.31343 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | |||
Power MOSFET 文件:90.72 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
TMOS POWER FET 30 AMPERES 60 VOLTS TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th | MOTOROLA 摩托罗拉 | |||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.045 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICA | STMICROELECTRONICS 意法半导体 | |||
60V N-Channel MOSFET 文件:663.34 Kbytes Page:9 Pages | FAIRCHILD 仙童半导体 | |||
60V N-Channel MOSFET 文件:663.34 Kbytes Page:9 Pages | FAIRCHILD 仙童半导体 |
NTP30N06产品属性
- 类型
描述
- 型号
NTP30N06
- 功能描述
MOSFET N-CH 60V 27A TO220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2450+ |
TO220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ON Semiconductor |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
ON |
TO-220 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON/安森美 |
25+ |
TO220 |
860000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
2511 |
5904 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
||||
ON/安森美 |
25+ |
TO-262 |
50000 |
全新原装正品支持含税 |
|||
ON |
24+ |
TO-220 |
25150 |
||||
O |
24+ |
TO-220A |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ON |
2023+ |
TO-220 |
50000 |
原装现货 |
|||
ON/安森美 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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DdatasheetPDF页码索引
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