TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

TMOS POWER FET 30 AMPERES 60 VOLTS

N?묬hannel Power MOSFET

文件：264.82 Kbytes Page：10 Pages

N−Channel Power MOSFET

N?묬hannel Power MOSFET

文件：264.82 Kbytes Page：10 Pages

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

文件：223.41 Kbytes Page：8 Pages

Fast Switching

文件：64.91 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：269.69 Kbytes Page：2 Pages

60V, 30A N-CHANNEL POWER MOSFET

文件：309.86 Kbytes Page：8 Pages