isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

60V N-Channel MOSFET

60V N-Channel MOSFET

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功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，32 A，35mΩ，D2PAK

60V LOGIC N-Channel MOSFET

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N-Channel QFET짰 MOSFET

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N-Channel QFET짰 MOSFET

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TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.045 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICA

60V N-Channel MOSFET

文件：663.34 Kbytes Page：9 Pages