Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8

文件：91.94 Kbytes Page：5 Pages

功率 MOSFET -30V -11.4A 19 mΩ 单 P 沟道 SO-8

-30V P-Channel MOSFET

•Low RDS(on) to Minimize Conduction Losses •Low Capacitance to Minimize Driver Losses •Optimized Gate Charge to Minimize Switching Losses •SOP-8 Surface Mount Package Saves Board Space VDS (V) = -30V ID = -11.4A (VGS = -10V) RDS(ON)

P-Channel 30-V (D-S) MOSFET

文件：994.96 Kbytes Page：9 Pages

Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8

文件：91.94 Kbytes Page：5 Pages

Standard Size Pushbuttons

General Specifications Electrical Capacity (Resistive Load) Power Level (silver): 3A @ 125V AC or 3A @ 250V AC or 3A @ 30V DC Logic Level (gold): 0.4VA maximum @ 28V AC/DC maximum (Applicable Range 0.1mA ~ 0.1A @ 20mV ~ 28V) Note: Find additional explanation of operating range in Supplement s

Bandpass Filters

文件：113.69 Kbytes Page：1 Pages

Lockit™ Loops and Clips

文件：112.75 Kbytes Page：1 Pages

Lockit Loops and Clips

文件：112.74 Kbytes Page：1 Pages

30 A Isolated SiC Gate Driver with Slew Rate Control and SPI

文件：1.06501 Mbytes Page：32 Pages