Compact XLR 3 to 5 pole adapters for lighting (DMX) applications

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COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

COMPLEMENTARY METAL OXIDE SILICON

NTE4093B and NTE4093BT Integrated Circuit CMOS, Quad 2−Input NAND Schmitt Trigger

Features: * Quiescent Current = 0.5nA Typ/Pkg at 5 Vdc * Supply Voltage Range = 3Vdc to 18Vdc * Capable of Driving Two Low−Power TTL Loads, One Low−Power Schottky TTL Load or Two HTL Loads Over the Rated Temperature Range * Double Diode Protection on All Inputs

NTE4093B and NTE4093BT Integrated Circuit CMOS, Quad 2−Input NAND Schmitt Trigger

Features: * Quiescent Current = 0.5nA Typ/Pkg at 5 Vdc * Supply Voltage Range = 3Vdc to 18Vdc * Capable of Driving Two Low−Power TTL Loads, One Low−Power Schottky TTL Load or Two HTL Loads Over the Rated Temperature Range * Double Diode Protection on All Inputs

Silicon N-Channel JFET Transistor VHF Amplifier, Mixer

Description: The NTE452 is a silicon, N–channel junction field effect tranistor (JFET) in a TO72 type package designed to be used in the depletion mode in VHF/UHF amplifiers.

MOSFET, N-Ch, Dual Gate, TV UHF/RF Amp, Gate Protected

Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: Low Reverse Transfer Capacitance – Crss = 0.03pf (Max) High Forward Transfer Admittance – |yfe| = 0–20 mmhos Diode Protected Gates 3 4 Ga

N-Channel Silicon JFET General Purpose Amp, Switch

Description: The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 type package designed for general purpose amplifier and switching applications.

Silicon N-Channel JFET Transistor General Purpose Amp, Switch

Silicon N–Channel JFET Transistor General Purpose Amp, Switch

N-Channel Silicon JFET General Purpose, Low Noise, Audio Frequency Amplifier

Features: Very Low Noise Low Gate Current Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V Gate–Source Voltage, VGSO . . . . . . . . . . . . . . . . . . . . . . . . . . .

N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch

N–Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch

Silicon P-Channel JFET Transistor AF Amp

Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . .

Silicon N−Channel JFET Transistor Dual, Matched Pair DC Amp/Sampler/Chopper

Features: • High Input Impedance: IG

Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications

Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . ±30V Gate Current, IG

Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications

Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . ±30V Gate Current, IG

Silicon N-Channel JFET Transistor Chopper, High Speed Switch

Applications: • Analog Switches • Choppers • Commutators

Silicon N-Channel JFET Transistor Chopper, High Speed Switch

Applications: • Analog Switches • Choppers • Commutators Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Drain–Gate Voltage, VDG . . . . . . . . . . . . .

Silicon NPN Transistor RF Power Output

Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: • Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficie

Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz

Description: The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state–of–the–art diffused emitter ballasting for improved ruggedness and reliability. Features: • Better than 15dB Gain at 30MHz and 100W (CW/PEP)

Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz

Description: The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile marine and citizens band equipment. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment. Features: • Specified 12.5

Silicon NPN Transistor RF Power Driver

Description: The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as output, driver or predriver stages in VHF equipment. Features: • Specified 175MHz, 28V Characteristics:

Silicon NPN Transistor RF Power Output

Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier and driver applications to 300MHz.

Silicon NPN Transistor RF Power Output

Description: The NTE476 is a silicon epitaxial NPN–planar transistor which employs a multi–emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters result in high RF current handling capability, high power gain, low base resista

Silicon NPN Transistor RF Power Output

Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: • High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz • Emitter ballasted construction and gold metallization for h

Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz

Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating conditions, and is internally input matched to optimize power gain and efficiency ov

Silicon NPN Transistor Darlington, General Purpose Amplifier, High Current

Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: • Desi

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4800 Series of high power transient suppressors are Silicon PN Junction devices designed for absorbtion of high voltage transients associated with power disturbances, switching and induced lighting effects. These devices were designed to be used on the output of switching po

Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz

Description: The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device utilizes matched input technology (Tuned Q) to increase bandwidth and power gain over the complete range of 806–866MHz. Features: • Designe

Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz

Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration for extremely broadband performance and optimum gain characteristics. Features:

Silicon NPN Transistor RF High Frequency Amplifier

Description: The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use in 12.5V UHF large–signal applications required in industrial equipment. Features: • Specified 12.5V, 470MHz Characteristics: Output Power = 0.75W Minimum Gain = 8dB

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4800 Series of high power transient suppressors are Silicon PN Junction devices designed for absorbtion of high voltage transients associated with power disturbances, switching and induced lighting effects. These devices were designed to be used on the output of switching po

Silicon NPN Transistor RF Power Output

Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: • High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz • TO39 Metal Sealed Package for High Reliability • Em

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage (Note 1), VGD . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage (Note 1), VGS . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . .

Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver

Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications. Features: • High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA • High Power Dissipation:

Surge Clamping, Overvoltage Transient Suppressor, Unidirectional

Description: The NTE4900 is a zener overvoltage transient suppressor in an axial lead type package designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener impedance, and fast resp

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Surge Clamping, Transient Overvoltage Suppressor Bidirectiona

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Surge Clamping, Transient Overvoltage Suppressor Bidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Surge Clamping, Transient Overvoltage Suppressor Bidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Surge Clamping, Transient Overvoltage Suppressor Bidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

MOSFET N-Ch, Enhancement Mode High Speed Switch

MOSFET N–Ch, Enhancement Mode High Speed Switch

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Surge Clamping, Transient Overvoltage Suppressor Bidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Surge Clamping, Transient Overvoltage Suppressor Bidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Surge Clamping, Transient Overvoltage Suppressor Bidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Toroidal Surface Mount Inductors

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

NOR GATE

Dual 3-input NOR gate and inverter

Dual 3-input NOR gate and inverter

Dual 3-input NOR gate and inverter

DUAL THREE INPUT NOR GATE PLUS INVERTER