Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4800 Series of high power transient suppressors are Silicon PN Junction devices designed for absorbtion of high voltage transients associated with power disturbances, switching and induced lighting effects. These devices were designed to be used on the output of switching po

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4828 is Pb-free (meets ROHS & Sony 259 specifications). AO4828L is a Green Product order

Dual N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 4.5A (VGS = 10V) ● RDS(ON)

LYLONE M/F HEX STANDOFF

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24.0 GHz to 29.5 GHz Transmit/Receive Dual Polarization Beamformer

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60V Dual N-Channel MOSFET

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