Description:

The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications.

Features:

• High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz

• TO39 Metal Sealed Package for High Reliability

• Emitter Electrode is Connected Electrically to the Case

Application:

1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications.