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NTE484

Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz

Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration for extremely broadband performance and optimum gain characteristics. Features:

NTE

NTE484

Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz

Description:\nThe NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration for extremely broadband performance and optimum gain characteristics.Features:\n• Designed

NTE

Surge Clamping

NTE

Surge Clamping

NTE

Band-switching diodes

DESCRIPTION Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.0 to 1.6 pF • Low diode forward resistance:

PHILIPS

飞利浦

GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm

GaAIAs Infrared Emitters (880 nm) Features ●Fabricated in a liquid phase epitaxy process ●High reliability ●Spectral match with silicon photodetectors ●SFH 484: Same package as LD 274 ●SFH 485: Same package as SFH 300, SFH 203 Applications ●IR remote control of hi-fi an

SIEMENS

西门子

Precision Rail-to-Rail Input & Output Operational Amplifiers

文件:522.84 Kbytes Page:20 Pages

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亚德诺

Precision Rail-to-Rail Input & Output Operational Amplifiers

文件:522.84 Kbytes Page:20 Pages

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亚德诺

NTE484产品属性

  • 类型

    描述

  • 型号

    NTE484

  • 制造商

    NTE Electronics

  • 功能描述

    DIODE SURGE CLAMPING UNIDIRECTIONAL 5000W VR=24V

更新时间:2026-7-22 16:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NTE
23+
TO-59
8510
原装正品代理渠道价格优势
原装
最新
原厂封装
8600
莱克讯原厂货源每一片都来自原厂原装现货薄利多

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