Silicon Complementary Transistors Darlington, High Speed Driver

Features: • High Speed Switching • Wide ASO Range • High Gain Bandwidth Product

Complementary Transistors

Features:\n• High Speed Switching\n• Wide ASO Range\n• High Gain Bandwidth Product

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Configuration • Guardring for Stress Protection • Low Forward

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE™ Schottky Power Rectifirer The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as recti

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE™ Schottky Power Rectifirer The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as recti