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MBRF2545CT价格
参考价格:¥7.3926
型号:MBRF2545CT 品牌:ON 备注:这里有MBRF2545CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBRF2545CT批发/采购报价,MBRF2545CT行情走势销售排行榜,MBRF2545CT报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MBRF2545CT | SWITCHMODE??SchottkyPowerRectifirer SWITCHMODE™SchottkyPowerRectifirer TheSWITCHMODEPowerRectifieremploystheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforuseasrecti | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | ||
MBRF2545CT | SCHOTTKYISOLATEDPLASTICRECTIFIER ReverseVoltage-35to60VoltsForwardCurrent-30.0Amperes FEATURES ♦IsolatedplasticpackagehasUnderwritersLaboratory FlammabilityClassifications94V-0 ♦Dualrectifierconstruction,positivecenter-tap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowp | GE GE Industrial Company | ||
MBRF2545CT | DualSchottkyBarrierRectifiers ReverseVoltage35to60VoltsForwardCurrent25.0Amperes Features ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Dualrectifierconstruction,positivecentertap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,higheffi | Good-Ark GOOD-ARK Electronics | ||
MBRF2545CT | Isolation25.0AMPS.SchottkyBarrierRectifiers Isolated25.0AMPS.SchottkyBarrierRectifiers Features PlasticmaterialusedcarriesUnderwritersLaboratoryClassifications94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,lowforwardvoltagedropHigh | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | ||
MBRF2545CT | DualCommon-CathodeSchottkyRectifier FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO- | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBRF2545CT | SWITCHMODE??SchottkyPowerRectifier SWITCHMODE™SchottkyPowerRectifier TheSWITCHMODEPowerRectifieremploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforuseasrect | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MBRF2545CT | IsolatedplasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0 FEATURES ♦IsolatedplasticpackagehasUnderwritersLaboratory FlammabilityClassifications94V-0 ♦Dualrectifierconstruction,positivecenter-tap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,highefficiency ♦Highcurrentcapability,lowforward | KERSEMI Kersemi Electronic Co., Ltd. | ||
MBRF2545CT | SCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE:30-100V CURRENT:30A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltaged | DSK Diode Semiconductor Korea | ||
MBRF2545CT | IsolatedplasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0 FEATURES ♦IsolatedplasticpackagehasUnderwritersLaboratory FlammabilityClassifications94V-0 ♦Dualrectifierconstruction,positivecenter-tap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,highefficiency ♦Highcurrentcapability,lowforward | KERSEMI Kersemi Electronic Co., Ltd. | ||
MBRF2545CT | TO-220FPlastic-EncapsulateDiodes SCHOTTKYBARRIERRECTIFIER FEATURES •SchottkyBarrierChip •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInvert | TGS Tiger Electronic Co.,Ltd | ||
MBRF2545CT | DualCommonCathodeSchottkyRectifier 文件:228.68 Kbytes Page:4 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | ||
MBRF2545CT | 封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTT 45V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | |
MBRF2545CT | 封装/外壳:TO-220-3 整包 包装:卷带(TR)剪切带(CT) 描述:DIODE ARRAY SCHOTTKY 45V TO220FP 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MBRF2545CT | 25.0AMPS.IsolatedSchottkyBarrierRectifiers 文件:182.23 Kbytes Page:2 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | ||
MBRF2545CT | DualCommon-CathodeSchottkyRectifier 文件:134.82 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBRF2545CT | Isolated25.0AMPS.SchottkyBarrierRectifiers 文件:357.47 Kbytes Page:2 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | ||
DualCommon-CathodeSchottkyRectifier FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO- | VishayVishay Siliconix 威世科技威世科技半导体 | |||
DualCommon-CathodeSchottkyRectifier FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO- | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Switch-modeSchottkyPowerRectifier TheSwitch−modePowerRectifieremploystheSchottkyBarrier principleinalargeareametal−to−siliconpowerdiode. State−of−the−artgeometryfeaturesepitaxialconstructionwithoxide passivationandmetaloverlaycontact.Ideallysuitedforuseas rectifiersinverylow−voltage,high−freque | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Switch-modeSchottkyPowerRectifier SWITCHMODE™SchottkyPowerRectifier TheSWITCHMODEPowerRectifieremploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforuseasrect | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SWITCHMODE??SchottkyPowerRectifier SWITCHMODE™SchottkyPowerRectifier TheSWITCHMODEPowerRectifieremploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforuseasrect | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Switch-modeSchottkyPowerRectifier TheSwitch−modePowerRectifieremploystheSchottkyBarrier principleinalargeareametal−to−siliconpowerdiode. State−of−the−artgeometryfeaturesepitaxialconstructionwithoxide passivationandmetaloverlaycontact.Ideallysuitedforuseas rectifiersinverylow−voltage,high−freque | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DualCommon-CathodeSchottkyRectifier FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO- | VishayVishay Siliconix 威世科技威世科技半导体 | |||
DualCommon-CathodeSchottkyRectifier FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO- | VishayVishay Siliconix 威世科技威世科技半导体 | |||
DualCommonCathodeSchottkyRectifier 文件:145.23 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
DualCommonCathodeSchottkyRectifier 文件:145.23 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
DualCommonCathodeSchottkyRectifier 文件:228.54 Kbytes Page:4 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | |||
BandpassFilter GeneralDescription KR2545isa67.5MHzsurfacemountbandpassfilter.Othercenterfrequenciesandbandwidthsavailable.Pleaseconsultthefactory. Features •SurfaceMountPackage •SharpTransitiontoStopband •20MHz1dBBandwidth •50ΩSourceandLoad | KR KR Electronics, Inc. | |||
Break-AwayBumpers 文件:132.1 Kbytes Page:1 Pages | HeycoHeyco. 海科 | |||
Break-AwayBumpers 文件:132.09 Kbytes Page:1 Pages | HeycoHeyco. 海科 | |||
METALBRUSH 文件:219.05 Kbytes Page:1 Pages | ASSUN ASSUN MOTOR Pte Ltd. | |||
PLLSynthesizerModule 文件:161.62 Kbytes Page:2 Pages | ASB Advanced Semiconductor Business Inc. |
MBRF2545CT产品属性
- 类型
描述
- 型号
MBRF2545CT
- 功能描述
肖特基二极管与整流器 30 Amp 45 Volt Dual
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TSC/台湾半导体 |
24+ |
NA/ |
42 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON/IR |
23+ |
TO-220F |
6893 |
||||
NA |
19+ |
82802 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
||||
TSC/VISHAY/Toohong |
24+ |
TO-220F |
56000 |
公司进口原装现货 批量特价支持 |
|||
ON |
23+ |
TO220 |
5000 |
原装正品,假一罚十 |
|||
ON |
24+ |
TO-2203LEADFULLPA |
8866 |
||||
ON/安森美 |
2447 |
TO220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
onsemi |
24+ |
TO-220-3 整包 |
30000 |
二极管-分立半导体产品-原装正品 |
|||
TSC/VISHAY/Toohong |
23+ |
TO-220F |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
台半 |
24+ |
TO-220F |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
MBRF2545CT规格书下载地址
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MBRF2545CT数据表相关新闻
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2020-12-21
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