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MBR2545CT价格
参考价格：￥3.8493
型号：MBR2545CT 品牌：MULTICOMP 备注：这里有MBR2545CT多少钱，2025年最近7天走势，今日出价，今日竞价，MBR2545CT批发/采购报价，MBR2545CT行情走势销售排行榜，MBR2545CT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR2545CT | SWITCHMODE??Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse | Motorola 摩托罗拉 |   | |
MBR2545CT | 30 Ampere Schottky Barrier Rectifiers Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • | Fairchild 仙童半导体 | | |
MBR2545CT | 30A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | DIODES 美台半导体 | | |
MBR2545CT | SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, | GE | | |
MBR2545CT | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Guard Ring For Transient Protection • High Current Capability, High Efficiency • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Ordering Information) • Epoxy Meets UL 94 V-0 Flammability Rating | MCC | | |
MBR2545CT | 30 AMP SCHOTTKY BARRIER RECTIFIER 30 AMP SCHOTTKY BARRIER RECTIFIER Schottky barrier rectifier Guard ring for reverse protection Low power loss, high efficiency High surge capacity VRRM 35 to 45 Volts | Microsemi 美高森美 | | |
MBR2545CT | Dual Schottky Barrier Rectifiers Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi | Good-Ark 固锝电子 | | |
MBR2545CT | SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high freq | BILIN 银河微电 | | |
MBR2545CT | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | | |
MBR2545CT | 25.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | | |
MBR2545CT | Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世威世科技公司 | | |
MBR2545CT | 25Amp schottky barrier rectifier 20to100 volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • High surge capacity • High Current Capability, High Efficiency • Low Power Loss | CHENYI 商朗电子 | | |
MBR2545CT | 25A Dual Schottky Rectifiers PRODUCT SUMMARY Voltage ratings available from 35 to 60 Volts FEATURES • Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal-silicon junction, majority carrier conduction • Low power loss, hi | SSC Silicon Standard Corp. | | |
MBR2545CT | SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | ONSEMI 安森美半导体 | | |
MBR2545CT | SCHOTTKY BARRIER RECTIFIERS SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 25 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, | PANJIT 強茂 | | |
MBR2545CT | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency | KERSEMI | | |
MBR2545CT | 25.0 AMPS. Schottky Barrier Rectifiers Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency | KERSEMI | | |
MBR2545CT | SCHOTTKY BARRIER RECTIFIERS FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | DSK | | |
MBR2545CT | 25.0AMP. Schottky Barrier Rectifiers Features ♦ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, hig | LUGUANG 鲁光电子 | | |
MBR2545CT | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts Features ● Meatl of Silicon Rectifier, Majority Conducton ● Guard ring for transient protection ● High surge capacity ● High Current Capability, High Efficiency ● Low Power Loss | KERSEMI | | |
MBR2545CT | SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | KERSEMI | | |
MBR2545CT | MBR2545CT Features Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over | SYC | | |
MBR2545CT | Schottky Barrier Rectifier, 30 A, 45 V | ONSEMI 安森美半导体 | | |
MBR2545CT | SCHOTTKY BARRIER RECTIFIER 文件：261.75 Kbytes Page：3 Pages | HORNBY 南通康比电子 | | |
MBR2545CT | Dual SchottkyBarrierRectifiers 文件：335.67 Kbytes Page：3 Pages | FS | | |
MBR2545CT | Schottky Barrier Rectifier 文件：238.72 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MBR2545CT | 肖特基二极管 | MCC | | |
MBR2545CT | 功率肖特基二极管(IF ≧ 1A) | PANJIT 強茂 | | |
MBR2545CT | High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 文件：204.23 Kbytes Page：6 Pages | SMC 桑德斯微电子 | | |
MBR2545CT | Dual Common Cathode Schottky Rectifier 文件：161.98 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
MBR2545CT | 30A SCHOTTKY RECTIFIERS 文件：435.56 Kbytes Page：2 Pages | DIGITRON | | |
MBR2545CT | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件：243.23 Kbytes Page：3 Pages | MCC | | |
MBR2545CT | Dual Common Cathode Schottky Rectifier 文件：208.81 Kbytes Page：4 Pages | TSC 台湾半导体 | | |
MBR2545CT | 封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | | |
MBR2545CT | 封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT） 描述：DIODE ARRAY SCHOTTKY 45V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | | |
MBR2545CT | 20.0 AMPS. Schottky Barrier Rectifiers 文件：207.04 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR2545CT | 25.0 AMPS. Schottky Barrier Rectifiers 文件：484.05 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR2545CT | 30 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件：115.68 Kbytes Page：3 Pages | MCC | | |
MBR2545CT | Dual Common-Cathode Schottky Rectifier 文件：134.82 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
MBR2545CT | Schottky Rectifier, 2 x 15 A 文件：113.76 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
MBR2545CT | 30A SCHOTTKY BARRIER RECTIFIER 文件：63.78 Kbytes Page：2 Pages | DIODES 美台半导体 | | |
MBR2545CT | 25.0 AMPS. Schottky Barrier Rectifiers 文件：361.42 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世威世科技公司 | | ||
Switch-mode Power Rectifiers The MBR2535CTG/45CTG series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features Guardring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature These are Pb−Free Devices* Me | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | KERSEMI | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世威世科技公司 | | ||
30 AMP SCHOTTKY BARRIER RECTIFIER 30 AMP SCHOTTKY BARRIER RECTIFIER Schottky barrier rectifier Guard ring for reverse protection Low power loss, high efficiency High surge capacity VRRM 35 to 45 Volts | Microsemi 美高森美 | | ||
SCHOTTKY RECTIFIER 30 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | | ||
Schottky Rectifier, 2 x 15 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diode | VishayVishay Siliconix 威世威世科技公司 | | ||
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 文件：204.23 Kbytes Page：6 Pages | SMC 桑德斯微电子 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | |
MBR2545CT产品属性
- 类型
描述
- 型号
MBR2545CT
- 功能描述
肖特基二极管与整流器 25 amp Rectifiers Schottky Barrier
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
2511 |
4526 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
||||
ON(安森美) |
23+ |
TO-220(TO-220-3) |
13626 |
公司只做原装正品,假一赔十 |
|||
ON |
2021+ |
TO-220AB |
9450 |
原装现货。 |
|||
FAIRCHILD/仙童 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ON |
22+ |
原厂封装 |
15850 |
原装正品，实单请联系 |
|||
ON |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ON |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
06+ |
TO-220 |
12000 |
自己公司全新库存绝对有货 |
|||
VISHAY/GI |
23+ |
TO-220 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FUJITSU |
TO |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
MBR2545CT规格书下载地址
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