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MBR2545CT价格
参考价格：￥3.8493
型号：MBR2545CT 品牌：MULTICOMP 备注：这里有MBR2545CT多少钱，2025年最近7天走势，今日出价，今日竞价，MBR2545CT批发/采购报价，MBR2545CT行情走势销售排行榜，MBR2545CT报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR2545CT | SWITCHMODE??Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse | Motorola 摩托罗拉 |   | |
MBR2545CT | 30 Ampere Schottky Barrier Rectifiers Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
MBR2545CT | 30A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | DIODES 美台半导体 | | |
MBR2545CT | SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, | GE GE Industrial Company | | |
MBR2545CT | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Guard Ring For Transient Protection • High Current Capability, High Efficiency • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Ordering Information) • Epoxy Meets UL 94 V-0 Flammability Rating | MCC 美微科 | | |
MBR2545CT | 30 AMP SCHOTTKY BARRIER RECTIFIER 30 AMP SCHOTTKY BARRIER RECTIFIER Schottky barrier rectifier Guard ring for reverse protection Low power loss, high efficiency High surge capacity VRRM 35 to 45 Volts | Microsemi 美高森美 | | |
MBR2545CT | Dual Schottky Barrier Rectifiers Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi | Good-Ark | | |
MBR2545CT | SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high freq | BILIN 银河微电 | | |
MBR2545CT | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | | |
MBR2545CT | 25.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | | |
MBR2545CT | Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | | |
MBR2545CT | 25Amp schottky barrier rectifier 20to100 volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • High surge capacity • High Current Capability, High Efficiency • Low Power Loss | CHENYI 商朗电子 | | |
MBR2545CT | 25A Dual Schottky Rectifiers PRODUCT SUMMARY Voltage ratings available from 35 to 60 Volts FEATURES • Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal-silicon junction, majority carrier conduction • Low power loss, hi | SSC Silicon Standard Corp. | | |
MBR2545CT | SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | ONSEMI 安森美半导体 | | |
MBR2545CT | SCHOTTKY BARRIER RECTIFIERS SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 25 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, | PANJIT 強茂 | | |
MBR2545CT | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency | KERSEMI | | |
MBR2545CT | 25.0 AMPS. Schottky Barrier Rectifiers Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency | KERSEMI | | |
MBR2545CT | SCHOTTKY BARRIER RECTIFIERS FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | DSK | | |
MBR2545CT | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts Features ● Meatl of Silicon Rectifier, Majority Conducton ● Guard ring for transient protection ● High surge capacity ● High Current Capability, High Efficiency ● Low Power Loss | KERSEMI | | |
MBR2545CT | 25.0AMP. Schottky Barrier Rectifiers Features ♦ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, hig | LUGUANG 鲁光电子 | | |
MBR2545CT | SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | KERSEMI | | |
MBR2545CT | MBR2545CT Features Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over | SYC | | |
MBR2545CT | Schottky Barrier Rectifier 文件：238.72 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MBR2545CT | 封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT） 描述：DIODE ARRAY SCHOTTKY 45V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | | |
MBR2545CT | 30A SCHOTTKY RECTIFIERS 文件：435.56 Kbytes Page：2 Pages | DIGITRON | | |
MBR2545CT | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件：243.23 Kbytes Page：3 Pages | MCC 美微科 | | |
MBR2545CT | Dual Common Cathode Schottky Rectifier 文件：208.81 Kbytes Page：4 Pages | TSC 台湾半导体 | | |
MBR2545CT | 封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | PAMDiodes Incorporated 龙鼎微龙鼎微电子（上海）有限公司 | | |
MBR2545CT | SCHOTTKY BARRIER RECTIFIER 文件：261.75 Kbytes Page：3 Pages | HORNBY 南通康比电子 | | |
MBR2545CT | Dual SchottkyBarrierRectifiers 文件：335.67 Kbytes Page：3 Pages | FS | | |
MBR2545CT | High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 文件：204.23 Kbytes Page：6 Pages | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | | |
MBR2545CT | Dual Common Cathode Schottky Rectifier 文件：161.98 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
MBR2545CT | Dual Common-Cathode Schottky Rectifier 文件：134.82 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
MBR2545CT | 20.0 AMPS. Schottky Barrier Rectifiers 文件：207.04 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR2545CT | 25.0 AMPS. Schottky Barrier Rectifiers 文件：484.05 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR2545CT | 30 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件：115.68 Kbytes Page：3 Pages | MCC 美微科 | | |
MBR2545CT | Schottky Rectifier, 2 x 15 A 文件：113.76 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
MBR2545CT | 30A SCHOTTKY BARRIER RECTIFIER 文件：63.78 Kbytes Page：2 Pages | DIODES 美台半导体 | | |
MBR2545CT | 25.0 AMPS. Schottky Barrier Rectifiers 文件：361.42 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Switch-mode Power Rectifiers The MBR2535CTG/45CTG series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features Guardring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature These are Pb−Free Devices* Me | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | KERSEMI | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
30 AMP SCHOTTKY BARRIER RECTIFIER 30 AMP SCHOTTKY BARRIER RECTIFIER Schottky barrier rectifier Guard ring for reverse protection Low power loss, high efficiency High surge capacity VRRM 35 to 45 Volts | Microsemi 美高森美 | | ||
SCHOTTKY RECTIFIER 30 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | | ||
Schottky Rectifier, 2 x 15 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diode | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 文件：204.23 Kbytes Page：6 Pages | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |
MBR2545CT产品属性
- 类型
描述
- 型号
MBR2545CT
- 功能描述
肖特基二极管与整流器 25 amp Rectifiers Schottky Barrier
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
DIODES/美台 |
22+ |
TO220AB |
90000 |
正规代理渠道假一赔十 |
|||
ON(安森美) |
2511 |
4526 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
||||
ON |
20+ |
TO-220 |
9986 |
||||
VISHAY/GI |
23+ |
TO-220 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON |
13+ |
TO-220 |
50000 |
深圳市勤思达科技有限公司主营ON系列全新原装正品,公司现货供应MBR1545CTG,欢迎咨询洽谈。 |
|||
FAIRCHILD/仙童 |
24+ |
TO-220 |
33 |
只做原厂渠道 可追溯货源 |
|||
ON/安森美 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
TAIWAN SEMICONDUCTOR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
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MBR2545CT规格书下载地址
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- MBR2060CT-E3/45
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