SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE™ Schottky Power Rectifirer The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as recti

SWITCHMODE™ Schottky Power Rectifirer

Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0

FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward

TO-220F Plastic-Encapsulate Diodes

SCHOTTKY BARRIER RECTIFIER FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Invert

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE™ Schottky Power Rectifirer The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as recti

SCHOTTKY ISOLATED PLASTIC RECTIFIER

Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low p

Dual Schottky Barrier Rectifiers

Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

Isolation 25.0 AMPS. Schottky Barrier Rectifiers

Isolated 25.0 AMPS. Schottky Barrier Rectifiers Features
Plastic material used carries Underwriters Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

SWITCHMODE??Schottky Power Rectifier

SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rect

Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0

FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage d

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

Switch-mode Schottky Power Rectifier

SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rect

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque

SWITCHMODE??Schottky Power Rectifier

SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rect

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

Dual Common Cathode Schottky Rectifier

文件：228.68 Kbytes Page：4 Pages

25.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：182.23 Kbytes Page：2 Pages

Dual Common-Cathode Schottky Rectifier

文件：134.82 Kbytes Page：5 Pages

Isolated 25.0 AMPS. Schottky Barrier Rectifiers

文件：357.47 Kbytes Page：2 Pages

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTT 45V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

肖特基势垒整流器，25 A，45 V

封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR）剪切带（CT） 描述：DIODE ARRAY SCHOTTKY 45V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

Dual Common Cathode Schottky Rectifier

文件：145.23 Kbytes Page：5 Pages

Dual Common Cathode Schottky Rectifier

文件：145.23 Kbytes Page：5 Pages

Dual Common Cathode Schottky Rectifier

文件：228.54 Kbytes Page：4 Pages

25A, 45V, Schottky Rectifier

Bandpass Filter

General Description KR 2545 is a 67.5 MHz surface mount bandpass filter. Other center frequencies and bandwidths available. Please consult the factory. Features • Surface Mount Package • Sharp Transition to Stopband • 20 MHz 1 dB Bandwidth • 50 Ω Source and Load

Break-Away Bumpers

文件：132.1 Kbytes Page：1 Pages

Break-Away Bumpers

文件：132.09 Kbytes Page：1 Pages

METAL BRUSH

文件：219.05 Kbytes Page：1 Pages

PLL Synthesizer Module

文件：161.62 Kbytes Page：2 Pages