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MBRB2545CT价格

参考价格:¥3.1633

型号:MBRB2545CT-E3/45 品牌:VISHAY 备注:这里有MBRB2545CT多少钱,2026年最近7天走势,今日出价,今日竞价,MBRB2545CT批发/采购报价,MBRB2545CT行情走势销售排行榜,MBRB2545CT报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBRB2545CT

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 175°C

ONSEMI

安森美半导体

MBRB2545CT

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

MBRB2545CT

Schottky Rectifier, 2 x 15 A

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

MBRB2545CT

Dual Schottky Barrier Rectifiers

Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

GOOD-ARK

固锝电子

MBRB2545CT

Product Specification

Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

GOOD-ARK

固锝电子

MBRB2545CT

25 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss

MCC

MBRB2545CT

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Configuration • Guardring for Stress Protection • Low Forward

MOTOROLA

摩托罗拉

MBRB2545CT

Schottky Barrier Rectifier

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • For surface mounted application • Metal of silicon junction, majority carrier conduction • Low forward voltage, high efficiency • Guardring for overvoltage protection • For use in low voltage, high fre

SURGE

MBRB2545CT

SCHOTTKY BARRIER RECTIFIER

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

BILIN

银河微电

MBRB2545CT

SCHOTTKY RECTIFIER

FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surg

GE

MBRB2545CT

High-Voltage Schottky Rectifier

FEATURES · Low Forward Voltage Drop · High Frequency Operation · Low Power Losses, High Efficiency APPLICATIONS · Switching Power Supplies · Converters · Freewheeling Diodes

ISC

无锡固电

MBRB2545CT

25A Dual Schottky Rectifiers

PRODUCT SUMMARY Voltage ratings available from 35 to 60 Volts FEATURES • Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal-silicon junction, majority carrier conduction • Low power loss, hi

SSC

Silicon Standard Corp.

MBRB2545CT

MBRB2545CT SCHOTTKY RECTIFIER

Features 200℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free

SMCDIODE

桑德斯微电子

MBRB2545CT

肖特基功率整流器,开关模式,30 A,45 V

This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal. • Center-Tap Configuration\n• Guardring for Stress Protection\n• Low Forward Voltage\n• 150 C Operating Junction Temperature\n• Epoxy Meets UL94, VO at 1/8\"\n• Guaranteed Reverse Avalanche\n• Short Heat Sink Tab Manufactured - Not Sheared!\n• Similar in Size to the Industry Standard TO-220 PackageM;

ONSEMI

安森美半导体

MBRB2545CT

SCHOTTKY RECTIFIER

文件:147.67 Kbytes Page:5 Pages

SMC

桑德斯微电子

MBRB2545CT

High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

文件:204.23 Kbytes Page:6 Pages

SMC

桑德斯微电子

MBRB2545CT

30 Amp Schottky Barrier Rectifier 20 to 60 Volts

文件:215.88 Kbytes Page:3 Pages

MCC

MBRB2545CT

Dual Common-Cathode Schottky Rectifier

文件:134.82 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBRB2545CT

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 45V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMI

安森美半导体

MBRB2545CT

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR) 描述:DIODE ARRAY SCHOTTKY 45V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 175°C

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 175°C

ONSEMI

安森美半导体

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 175°C

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 175°C

ONSEMI

安森美半导体

Schottky Rectifier, 2 x 15 A

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common Cathode Schottky Rectifier

文件:145.23 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common Cathode Schottky Rectifier

文件:145.23 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common Cathode Schottky Rectifier

文件:145.23 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:129.9 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:129.9 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:129.9 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:129.9 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:129.9 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:129.9 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

肖特基整流管

STMICROELECTRONICS

意法半导体

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse

MOTOROLA

摩托罗拉

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE™ Schottky Power Rectifirer The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as recti

MOTOROLA

摩托罗拉

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE™ Schottky Power Rectifirer The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as recti

MOTOROLA

摩托罗拉

MBRB2545CT产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Configuration:

    Common Cathode

  • VRRM Min (V):

    45

  • VF Max (V):

    0.82

  • IRM Max (µA):

    200

  • IO(rec) Max (A):

    30

  • IFSM Max (A):

    150

  • Package Type:

    D2PAK-3/TO-263-2

更新时间:2026-5-18 17:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
ONSemi
2133
D2PAK
31398
全新原装公司现货
ON
23+
TO-263
65800
IR
03+
TO-263
10
原装进口无铅现货
ONSEMI/安森美
1021+
明嘉莱只做原装正品现货
2510000
TO263-3
ON(安森美)
23+
14827
公司只做原装正品,假一赔十
ON
24+
TO-263
53000
一级代理/全新原装现货/长期供应!
ON(安森美)
24+
标准封装
7648
全新原装正品/价格优惠/质量保障
ON
2024
TO-263
16903
全新原装正品,现货销售
ON(安森美)
23+
N/A
178
代理渠道,价格优势

MBRB2545CT数据表相关新闻