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MBRB2545CT价格
参考价格：￥3.1633
型号：MBRB2545CT-E3/45 品牌：VISHAY 备注：这里有MBRB2545CT多少钱，2025年最近7天走势，今日出价，今日竞价，MBRB2545CT批发/采购报价，MBRB2545CT行情走势销售排行榜，MBRB2545CT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRB2545CT | SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Configuration • Guardring for Stress Protection • Low Forward | Motorola 摩托罗拉 |   | |
MBRB2545CT | SCHOTTKY RECTIFIER FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surg | GE | | |
MBRB2545CT | Dual Schottky Barrier Rectifiers Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi | Good-Ark 固锝电子 | | |
MBRB2545CT | SCHOTTKY BARRIER RECTIFIER FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | BILIN 银河微电 | | |
MBRB2545CT | Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | | |
MBRB2545CT | Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | | |
MBRB2545CT | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | MCC | | |
MBRB2545CT | SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 175°C | ONSEMI 安森美半导体 | | |
MBRB2545CT | MBRB2545CT SCHOTTKY RECTIFIER Features 200℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free | SMCDIODE 桑德斯微电子 | | |
MBRB2545CT | 25A Dual Schottky Rectifiers PRODUCT SUMMARY Voltage ratings available from 35 to 60 Volts FEATURES • Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal-silicon junction, majority carrier conduction • Low power loss, hi | SSC Silicon Standard Corp. | | |
MBRB2545CT | Schottky Barrier Rectifier Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • For surface mounted application • Metal of silicon junction, majority carrier conduction • Low forward voltage, high efficiency • Guardring for overvoltage protection • For use in low voltage, high fre | Surge | | |
MBRB2545CT | Product Specification Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi | Good-Ark 固锝电子 | | |
MBRB2545CT | High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 文件：204.23 Kbytes Page：6 Pages | SMC 桑德斯微电子 | | |
MBRB2545CT | SCHOTTKY RECTIFIER 文件：147.67 Kbytes Page：5 Pages | SMC 桑德斯微电子 | | |
MBRB2545CT | 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 45V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | | |
MBRB2545CT | 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 45V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | |
MBRB2545CT | 肖特基功率整流器，开关模式，30 A，45 V | ONSEMI 安森美半导体 | | |
MBRB2545CT | 30 Amp Schottky Barrier Rectifier 20 to 60 Volts 文件：215.88 Kbytes Page：3 Pages | MCC | | |
MBRB2545CT | Dual Common-Cathode Schottky Rectifier 文件：134.82 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | |
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | | ||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 175°C | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 175°C | ONSEMI 安森美半导体 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | | ||
SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 175°C | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 175°C | ONSEMI 安森美半导体 | | ||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Dual Common Cathode Schottky Rectifier 文件：145.23 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
Dual Common Cathode Schottky Rectifier 文件：145.23 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
Dual Common Cathode Schottky Rectifier 文件：145.23 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
肖特基整流管 | STMICROELECTRONICS 意法半导体 | | ||
Bandpass Filter General Description KR 2545 is a 67.5 MHz surface mount bandpass filter. Other center frequencies and bandwidths available. Please consult the factory. Features • Surface Mount Package • Sharp Transition to Stopband • 20 MHz 1 dB Bandwidth • 50 Ω Source and Load | KR | | ||
Break-Away Bumpers 文件：132.1 Kbytes Page：1 Pages | Heyco | | ||
Break-Away Bumpers 文件：132.09 Kbytes Page：1 Pages | Heyco | | ||
METAL BRUSH 文件：219.05 Kbytes Page：1 Pages | ASSUN | | ||
PLL Synthesizer Module 文件：161.62 Kbytes Page：2 Pages | ASB | |
MBRB2545CT产品属性
- 类型
描述
- 型号
MBRB2545CT
- 功能描述
肖特基二极管与整流器 30A 45V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
7648 |
全新原装正品/价格优惠/质量保障 |
|||
VISHAY(威世) |
24+ |
TO-263AB |
5627 |
百分百原装正品,可原型号开票 |
|||
VISHAY/威世 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR |
03+ |
TO-263 |
10 |
||||
ON |
24+ |
TO-263 |
53000 |
一级代理/全新原装现货/长期供应! |
|||
ON/安森美 |
24+ |
TO-263 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
TO-251 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
VISHAY/威世 |
24+ |
35000 |
只做原厂渠道 可追溯货源 |
||||
ON |
2024 |
TO-263 |
16903 |
全新原装正品,现货销售 |
|||
24+ |
3000 |
公司现货 |
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MBRB2545CT数据表相关新闻
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肖特基二极管与整流器 10A 45V
2019-8-6
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